James Hone

TL;DR: In this article, an electrochemical method called ODT was proposed for transferring chemical vapor deposited graphene from physically deposited copper catalyst layers, which is particularly suitable where the copper is adhered to a substrate such as oxidized silicon.

TL;DR: This work demonstrates a hexagonal boron nitride (hBN) based encapsulation technique, and provides a systematic study of fully encapsulated devices based on InSe and GaSe, which has not been reported until now.

TL;DR: The first 96-well plate platform to screen effects of micro- and nanotopographies on cell growth and proliferation and triple the number of T cells in long-term expansion is demonstrated, with direct clinical applicability in adoptive immunotherapy.

TL;DR: The results of two sets of experiments to measure the elastic?plastic behavior of gold at the nanometre length scale are reported in this article, and the results of detailed finite element analyses of the specimen suggest that the critical resolved shear stress of the gold single crystal was as high as 135?MPa which would lead to a maximum uniaxial stress of about 500?MPa after several per cent strain.

TL;DR: A technique for assembling length sorted and chirality monodisperse DNA-wrapped SWCNT segments on hydrophilic lines patterned on a passivated oxidized silicon substrate is developed and represents an important step forward toward the potential implementation of complex SWC NT devices and circuits.