James Hone

TL;DR: These findings provide experimental support of the recently proposed interlayer defect exciton model and highlight the importance of an underlying three-dimensional strain profile of deformed monolayer semiconductors, which is essential to optimize emitter-mode coupling in nanoplasmonics, for dipole-dipole coupling schemes, or for magnetic proximity-coupling.

TL;DR: A high throughput patterning process used to create arrays of molecular-scale features for the study of cytoskeletal protein binding interactions using a shadow-evaporated metal mask to facilitate lift-off of features defined by nanoimprint lithography is described.

TL;DR: In this paper, the effects of gamma radiation on graphene field effect transistors (GFETs) were investigated and a method to mitigate those effects by developing a radiation-hardened version of back-gated GFETs was proposed.

TL;DR: The carrier transport in the oxidized WSe2 FET is shown to change to a high performance p-type device with greatly reduced channel and contact resistances with the increase in the plasma oxidation time.

TL;DR: In this paper, a graphene-on-silicon-nitride (G2S) drum was placed in a tunable optical cavity to observe position dependent damping and resonant frequency control of the devices due to optical absorption by graphene.