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James Hone

Researcher at Columbia University

Publications -  702
Citations -  128248

James Hone is an academic researcher from Columbia University. The author has contributed to research in topics: Graphene & Monolayer. The author has an hindex of 127, co-authored 637 publications receiving 108193 citations. Previous affiliations of James Hone include DARPA & Santa Fe Institute.

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Probing substrate-dependent long-range surface structure of single-layer and multilayer Mo S 2 by low-energy electron microscopy and microprobe diffraction

TL;DR: In this article, the long-range surface structure of the dichalcogenide S was probed with nanometer-length spatial resolution using low energy electron microscopy (LEEM) and microprobe low-energy electron diffraction (\ensuremath{\mu}-LEED).
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Tunable Exciton-Optomechanical Coupling in Suspended Monolayer MoSe2.

TL;DR: In this article, a gate-tunable exciton-optomechanical coupling was observed in a suspended monolayer MoSe2 mechanical resonator, and the coupling strength was also shown to be gate-tuneable.
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Tunable electronic correlation effects in nanotube-light interactions

TL;DR: In this paper, the effect of charge carrier doping on optical transition energies and line broadening in carbon nanotubes is investigated. But the results demonstrate the differing role of screening of many-body electronic interactions on the macroscopic and microscopic length scales, a feature inherent to quasi-1D systems.
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Clean graphene electrodes on organic thin-film devices via orthogonal fluorinated chemistry.

TL;DR: The use of Raman spectroscopy, atomic force microscopy, and scanning electron microscopy are used to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film, and to demonstrate the transfer method's compatibility with organic semiconductors.
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Coherent Four-Wave Mixing on Hybrid Graphene-Silicon Photonic Crystals

TL;DR: By placing monolayer graphene on silicon membrane, the effective Kerr coefficient of the hybrid media is enhanced 20 times compared to monolithic silicon in this paper, which allows nonlinear functionalities including low power switching/gating, signal regeneration and parametric conversion, enhancing CMOS integrated photonic information processing on chips.