James Hone

TL;DR: In this article, a self-aligned GFET with channel lengths of 2 μm was fabricated with graphene channels fully encapsulated in hexagonal boron nitride (hBN) implementing a selfaligned fabrication scheme.

TL;DR: In this article, the gate-driven metal-insulator transitions and the metallic phase in twisted WSe$_2$ near half filling of the first moir\'e subband are characterized.

TL;DR: In this paper, a highly effective electrothermal tuning method is demonstrated for Al-SiC nanomechanical resonators, which can be used for effective frequency tuning in deployable SiC-based nanoelectromechanical system devices and systems for applications that would benefit from SiC as the structural material.

TL;DR: There are two current methods to process graphene electrodes over the large scale: graphitization of single crystal SiC and chemical vapor deposition (CVD) on metal fi lms.

TL;DR: The results demonstrate that the interplay between multiple moiré patterns can be utilized to controllably modify the symmetry and electronic properties of the composite heterostructure, enabling tunable crystal symmetry and strong modification of the graphene band structure.