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James Hone

Researcher at Columbia University

Publications -  702
Citations -  128248

James Hone is an academic researcher from Columbia University. The author has contributed to research in topics: Graphene & Monolayer. The author has an hindex of 127, co-authored 637 publications receiving 108193 citations. Previous affiliations of James Hone include DARPA & Santa Fe Institute.

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Optical Third-Harmonic Generation in Graphene

TL;DR: In this paper, strong third-harmonic generation in monolayer graphene grown by chemical vapor deposition and transferred to an amorphous silica (glass) substrate is reported, where the photon energy is in threephoton resonance with the exciton-shifted van Hove singularity at the M point of graphene.
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Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control.

TL;DR: Two dimensional transition metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties and potential for applica... as discussed by the authors.
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Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics

TL;DR: Current developments in graphene devices utilizing boron-nitride dielectrics are reviewed and Field-effect transistor (FET) characteristics of these systems at high bias are examined.
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Tunable fractional quantum hall phases in bilayer graphene

TL;DR: Fractional QHE states in BLG that show phase transitions that can be tuned by a transverse electric field are reported, providing a model platform with which to study the role of symmetry-breaking in emergent states with topological order.
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Excitons in strain-induced one-dimensional moiré potentials at transition metal dichalcogenide heterojunctions.

TL;DR: The combination of piezoresponse force microscopy and optical measurements reveals the influence of strain in the formation of one-dimensional moiré patterns and the resulting behaviour of interlayer excitons in van der Waals heterostructures, establishing strain engineering as an effective method to tailorMoiré potentials and their optoelectronic response on demand.