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James Hone

Researcher at Columbia University

Publications -  702
Citations -  128248

James Hone is an academic researcher from Columbia University. The author has contributed to research in topics: Graphene & Monolayer. The author has an hindex of 127, co-authored 637 publications receiving 108193 citations. Previous affiliations of James Hone include DARPA & Santa Fe Institute.

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P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3

TL;DR: In this article , the authors present the Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), which is a centre of excellence in future low-energy electronics technologies.
Journal Article

Coulomb engineering of the bandgap in 2D semiconductors

TL;DR: In this paper, the Coulomb interaction was used to tune the electronic bandgap in monolayers of WS2 and WSe2 by hundreds of meV, and an in-plane dielectric heterostructure with a spatially dependent bandgap was presented.
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Domain-Dependent Surface Adhesion in Twisted Few-Layer Graphene: Platform for Moiré-Assisted Chemistry.

TL;DR: In this paper , the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for controlling the behavior of these systems and report the emergence and engineering of stacking domain-dependent surface chemistry in twisted few-layer graphene.
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Unconventional non-local relaxation dynamics in a twisted trilayer graphene moiré superlattice

TL;DR: In this paper , a twisted double trilayer graphene (TDTG) was studied using nano-optical and tunneling spectroscopy tools, revealing a surprising optical and electronic contrast, as well as a stacking energy imbalance emerging between the moiré domains.
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Ultrafast Ferroelectric Ordering on the Surface of a Topological Semimetal MoTe2.

TL;DR: In this paper, the authors report ultrafast ferroelectric ordering on the surface of a paraelectric topological semimetal 1T'-MoTe2 in the linear excitation regime, with the order parameter directly proportional to the excitation intensity.