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James Hone

Researcher at Columbia University

Publications -  702
Citations -  128248

James Hone is an academic researcher from Columbia University. The author has contributed to research in topics: Graphene & Monolayer. The author has an hindex of 127, co-authored 637 publications receiving 108193 citations. Previous affiliations of James Hone include DARPA & Santa Fe Institute.

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Electrically integrated SU-8 clamped graphene drum resonators for strain engineering

TL;DR: In this paper, the authors demonstrate fabrication and direct electrical measurement of circular SU-8 polymer-clamped chemical vapor deposition graphene drum resonators, which increases device yield and responsivity, while providing a cleaner resonance spectrum from eliminated edge modes.
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Deep moir\'e potentials in twisted transition metal dichalcogenide bilayers

TL;DR: In this paper, the authors report experimental measurements of the structure and spectroscopic properties of twisted bilayers of WSe2 and MoSe2 in the H-stacking configuration using scanning tunneling microscopy (STM).
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Direct measurement of strain-induced changes in the band structure of carbon nanotubes.

TL;DR: The effect of uniaxial strain on the optical transition energies of single-walled carbon nanotubes with known chiral indices was measured by Rayleigh scattering spectroscopy and modified to account for internal sublattice relaxation results in quantitative agreement with experiment.
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Terahertz Nanofocusing with Cantilevered Terahertz-Resonant Antenna Tips

TL;DR: THz-resonant scanning probe tips are developed, yielding strongly enhanced and nanoscale confined THz near fields at their tip apex, and their first and second order geometrical antenna resonances are indicated, which are corroborated by numerical simulations.
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High-Quality Magnetotransport in Graphene Using the Edge-Free Corbino Geometry

TL;DR: In this article, the authors report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes and demonstrate that high device mobility is realized using boron nitride encapsulation together with a dualgraphite gate structure.