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Massoud Pedram

Researcher at University of Southern California

Publications -  812
Citations -  25236

Massoud Pedram is an academic researcher from University of Southern California. The author has contributed to research in topics: Energy consumption & CMOS. The author has an hindex of 77, co-authored 780 publications receiving 23047 citations. Previous affiliations of Massoud Pedram include University of California, Berkeley & Syracuse University.

Papers
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Proceedings ArticleDOI

Theoretical bounds for switching activity analysis in finite-state machines

TL;DR: Using a Markov chain model for the behavior of the states of the FSM, theoretical bounds for the average Hamming distance on the state lines are derived which are valid irrespective of the state encoding used in the final implementation.
Proceedings ArticleDOI

ALBORZ: Address Level Bus Power Optimization

TL;DR: The ALBORZ code is constructed based on transition signaling the limited-weight codes and, with enhancements to make it adaptive and irredundant, results in up to 89% reduction in the instruction bus switching activity, at the expense of a small area overhead.
Proceedings ArticleDOI

Low power synthesis of finite state machines with mixed D and T flip-flops

TL;DR: A new implementation of state machines by using a combination of D and T flip-flops is thereby proposed, which in conjunction with the proposed encoding algorithm, reduces power consumption by an average of 15%.
Journal ArticleDOI

An Efficient Pipelined Architecture for Superconducting Single Flux Quantum Logic Circuits Utilizing Dual Clocks

TL;DR: This article presents an architecture for realizing SFQ circuits which removes all path balancing DFFs, resulting in a huge reduction in total area, node and Josephson junction count, and power consumption.
Journal ArticleDOI

Internal write-back and read-before-write schemes to eliminate the disturbance to the half-selected cells in SRAMs

TL;DR: Two schemes, one for single-ended and the other for differential sensing SRAMs, to eliminate the half-selection disturbance are presented, which do not degrade write-ability of the SRAM cells, and are bit-addressable.