M
Massoud Pedram
Researcher at University of Southern California
Publications - 812
Citations - 25236
Massoud Pedram is an academic researcher from University of Southern California. The author has contributed to research in topics: Energy consumption & CMOS. The author has an hindex of 77, co-authored 780 publications receiving 23047 citations. Previous affiliations of Massoud Pedram include University of California, Berkeley & Syracuse University.
Papers
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Proceedings ArticleDOI
Theoretical bounds for switching activity analysis in finite-state machines
TL;DR: Using a Markov chain model for the behavior of the states of the FSM, theoretical bounds for the average Hamming distance on the state lines are derived which are valid irrespective of the state encoding used in the final implementation.
Proceedings ArticleDOI
ALBORZ: Address Level Bus Power Optimization
TL;DR: The ALBORZ code is constructed based on transition signaling the limited-weight codes and, with enhancements to make it adaptive and irredundant, results in up to 89% reduction in the instruction bus switching activity, at the expense of a small area overhead.
Proceedings ArticleDOI
Low power synthesis of finite state machines with mixed D and T flip-flops
TL;DR: A new implementation of state machines by using a combination of D and T flip-flops is thereby proposed, which in conjunction with the proposed encoding algorithm, reduces power consumption by an average of 15%.
Journal ArticleDOI
An Efficient Pipelined Architecture for Superconducting Single Flux Quantum Logic Circuits Utilizing Dual Clocks
Ghasem Pasandi,Massoud Pedram +1 more
TL;DR: This article presents an architecture for realizing SFQ circuits which removes all path balancing DFFs, resulting in a huge reduction in total area, node and Josephson junction count, and power consumption.
Journal ArticleDOI
Internal write-back and read-before-write schemes to eliminate the disturbance to the half-selected cells in SRAMs
Ghasem Pasandi,Massoud Pedram +1 more
TL;DR: Two schemes, one for single-ended and the other for differential sensing SRAMs, to eliminate the half-selection disturbance are presented, which do not degrade write-ability of the SRAM cells, and are bit-addressable.