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Massoud Pedram

Researcher at University of Southern California

Publications -  812
Citations -  25236

Massoud Pedram is an academic researcher from University of Southern California. The author has contributed to research in topics: Energy consumption & CMOS. The author has an hindex of 77, co-authored 780 publications receiving 23047 citations. Previous affiliations of Massoud Pedram include University of California, Berkeley & Syracuse University.

Papers
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Proceedings ArticleDOI

Gate Sizing and Replication to Minimize the Effects of Virtual Ground Parasitic Resistances in MTCMOS Designs

TL;DR: A new design methodology is introduced that minimizes the impact of virtual ground parasitic resistances on the performance of an MTCMOS circuit by using gate resizing and logic restructuring (i.e., gate replication.)
Proceedings ArticleDOI

Panel: Physical Design And Synthesis: Merge Or Die

TL;DR: In this paper, the authors address the current split between logic synthesis and physical design and discuss possibilities for merging the two, or at least bringing them closer together, and highlight challenges and potential pitfalls that lie ahead.
Journal ArticleDOI

Hierarchical power management of a system with autonomously power-managed components using reinforcement learning

TL;DR: This paper presents a hierarchical dynamic power management framework based on reinforcement learning technique, which aims at power savings in a computer system with multiple I/O devices running a number of heterogeneous applications, and shows that the proposed approach considerably enhances power savings while maintaining good performance levels.
Proceedings ArticleDOI

Constructing minimal spanning/Steiner trees with bounded path length

TL;DR: This paper presents an exact algorithm and two heuristics for solving the Bounded path length Minimal Spanning Tree (BMST) problem, which has polynomial space complexity and is hence more practical than the method presented by Gabow.
Patent

PG-gated data retention technique for reducing leakage in memory cells

TL;DR: In this article, the authors proposed a method of forming a memory cell by coupling a first transistor between a supply rail and a node that is operable to accept a supply voltage.