M
Massoud Pedram
Researcher at University of Southern California
Publications - 812
Citations - 25236
Massoud Pedram is an academic researcher from University of Southern California. The author has contributed to research in topics: Energy consumption & CMOS. The author has an hindex of 77, co-authored 780 publications receiving 23047 citations. Previous affiliations of Massoud Pedram include University of California, Berkeley & Syracuse University.
Papers
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Proceedings ArticleDOI
A Hyper-Parameter Based Margin Calculation Algorithm for Single Flux Quantum Logic Cells
TL;DR: This paper presents a novel method for evaluating the robustness of single flux quantum (SFQ) logic cells in a superconducting electronic circuit that improves the state-of-the-art by accounting for the global sources of variation, clustering cell parameters into hyper-parameters, and considering the co-dependency of these hyper- parameters when calculating a feasible parameter region.
Proceedings ArticleDOI
Battery cell configuration for organic light emitting diode display in modern smartphones and tablet-PCs
TL;DR: For-mulize the system energy efficiency in terms of the battery internal losses as well the converter efficiency considering the OLED power supply condition and introduce the optimal battery setup for different sizes and resolutions of the OLED display for modern smartphones and tablet-PCs.
Proceedings ArticleDOI
Improving sampling efficiency for system level power estimation
TL;DR: An efficient statistical sampling technique which is suitable for estimating the total power consumption of a large VLSI system and shows a 4x reduction in the simulation time compared to existing Monte-Carlo simulation techniques.
Proceedings ArticleDOI
Modeling and Propagation of Noisy Waveforms in Static Timing Analysis
TL;DR: SGDP is compatible with the current level of gate characterization in conventional ASIC cell libraries, and as a result, it can be easily incorporated into commercial STA tools to improve their accuracy.
Proceedings ArticleDOI
Optimizing the Operating Voltage of Tunnel FET-Based SRAM Arrays Equipped with Read/Write Assist Circuitry
TL;DR: The results show that for a 32×32 TFET outward SRAM array, the minimum energy consumption may be achieved at the supply voltage of 200mV (300mV) with 1.32GHz (4.55GHz) as the read access frequency.