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Max C. Lemme

Researcher at RWTH Aachen University

Publications -  344
Citations -  12984

Max C. Lemme is an academic researcher from RWTH Aachen University. The author has contributed to research in topics: Graphene & Silicon. The author has an hindex of 52, co-authored 311 publications receiving 10790 citations. Previous affiliations of Max C. Lemme include University of Siegen & Harvard University.

Papers
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A Graphene Field-Effect Device

TL;DR: In this article, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated, where a conventional top-down CMOS-compatible process flow is applied.
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Recommended Methods to Study Resistive Switching Devices

TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
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Efficient Inkjet Printing of Graphene

TL;DR: An efficient and mature inkjet printing technology is introduced for mass production of coffee-ring-free patterns of high-quality graphene at high resolution (unmarked scale bars are 100 μm).
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Gate-activated photoresponse in a graphene p-n junction

TL;DR: Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.
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Precision cutting and patterning of graphene with helium ions

TL;DR: In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure, providing fast lithography compatible with graphene, with approximately 15 nm feature sizes.