Institution
National Institute of Technology, Silchar
Education•Silchar, Assam, India•
About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.
Topics: Computer science, Control theory, PID controller, Electric power system, Artificial neural network
Papers published on a yearly basis
Papers
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TL;DR: In this article, a simple microwave method was used to synthesize BiPO4 nanomaterials using EDTA (ethylene diamine tetra acetic acid) as the surfactant via a simple microwaved method.
33 citations
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TL;DR: In this paper, the authors proposed a promising configuration of DG-TFET with asymmetric gate-drain overlap, where only back gate is overlapped with drain region to remove simultaneously the ambipolar conduction and enhance HF performances.
Abstract: To remove simultaneously the ambipolar conduction and enhance HF performances, we propose a promising configuration of DG-TFET with asymmetric gate–drain overlap (ASGDO DG-TFET) in which only back gate is overlapped with drain region. This proposed structure of DG-TFET removes the trade-off between ambipolarity and HF performances by taking the merit of gate–drain overlap in terms of reduction in ambipolarity and suppressing its demerit with reduced gate–drain parasitic capacitance. Using 2-D simulation, it is observed that ambipolar conduction can be suppressed to a large extent in DG-TFET with only 20 nm of back gate–drain overlap, thus not limiting the scaling of drain region compared to symmetric gate–drain overlap DG-TFET (SGDO DG-TFET). Due to the presence of enhanced depletion layer in the drain region caused by a large vertical electrical field, tunneling width at drain–channel interface is found to be maximum in the proposed device, which eventually prevents the charge carriers to tunnel. Furthermore, ASGDO improves the HF performance parameters such as cutoff frequency and gain–bandwidth product compared to SGDO due to reduction in gate–drain parasitic capacitance, and this improvement is found to be consistent while scaling down the channel length.
33 citations
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TL;DR: The normalized SID follows 1/SS2 trend, thus signifies the dominancy of BTBT over TAT in Ferro-TFET, and input referred noise PSD, SVG remains constant for whole range of gate voltage deviating from the nature for conventional MOSFET.
33 citations
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TL;DR: In this article, a single-effect LiBr/H 2 O absorption chiller system for air-conditioning applications aiming at achieving the minimum product cost was optimized by using structural coefficient.
Abstract: The optimization strategy for absorption chiller systems is generally based on thermodynamic analysis. However, the optimum, so obtained, does not always guarantee the economic optimum. In this regard, the thermoecommics that combines the thermodynamic principles with economic parameters plays a vital role for achieving the cost effectiveness of these systems. In this paper, this technique is applied to optimize a single-effect LiBr/H 2 O absorption chiller system for air-conditioning applications aiming at achieving the minimum product cost. This optimization methodology is based on the relative interdependence between component irreversibility and the total system irreversibility. This relationship, known as structural coefficient, is used to evaluate the economic cost of the product of the system. The use of structural coefficient eliminates complex numerical procedures, and the optimization is achieved by sequential local optimization of the subsystems of the system. The analysis reveals that the capital cost of the optimum configuration is increased by about 33.3%, from the base case, however, the additional cost is well compensated by reduced fuel cost. This is possible because of reduction of plant irreversibilities by about 47.2%.
33 citations
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TL;DR: In this paper, the first-principle calculation of room temperature phase TiO2, SnO2 and ZrO2 has been performed using meta-generalized gradient approximation functional (meta-GGA) with strongly constrained and appropriately normed (SCAN), the semi-local exschange-correlation function.
33 citations
Authors
Showing all 2010 results
Name | H-index | Papers | Citations |
---|---|---|---|
Abdullah Gani | 59 | 279 | 15355 |
Subhransu Ranjan Samantaray | 39 | 167 | 4880 |
Subhasish Dey | 39 | 220 | 4755 |
Bithin Datta | 37 | 158 | 3932 |
Arindam Ghosh | 33 | 248 | 6091 |
Raghavan Murugan | 33 | 126 | 3838 |
Md. Ahmaruzzaman | 32 | 113 | 6590 |
Deepak Puthal | 31 | 149 | 3213 |
Sivaji Bandyopadhyay | 31 | 310 | 4436 |
Ibrar Yaqoob | 30 | 77 | 7858 |
Lalit Chandra Saikia | 29 | 121 | 3154 |
Krishnamurthy Muralidhar | 28 | 218 | 2972 |
Sudip Dey | 28 | 155 | 1956 |
Krishna Murari Pandey | 27 | 262 | 2455 |
Shailendra Jain | 27 | 128 | 3907 |