National Institute of Technology, Silchar

About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.

Simulative study of random waypoint mobility model for mobile ad hoc networks

Abstract: Connectivity of Mobile Ad-hoc Networks (MANET) is highly dependent on the mobility model it follows. From previous studies, it has been found that Random Waypoint Mobility Model (RWP) is widely used to simulate performance of the MANETs. This mobility model resembles the mobility of people using mobile phones in a given area. Connectivity is an important issue in a MANET following RWP model and hence researchers are trying out different ways to enhance connectivity. So, this model is considered and the variation of connectivity for different varying parameters is studied. The RWP model is simulated in MATLAB, followed by the study of the node connectivity by changing different parameters like number of user nodes, simulation time and simulation area. Further, it is shown that connectivity is enhanced in each case after introducing agent nodes. This study gives an estimate of number of nodes required for achieving desired connectivity of the network.

Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

Abstract: This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure.

Empirical Correlations with Standard Penetration Test (SPT)-N for Estimating Shear Wave Velocity Applicable to Any Region

Abstract: Shear wave velocity is one of the most important parameters for determining dynamic soil properties as well as for site characterization. Though there are several field tests to measure the shear wave velocity (V s ) but these are not always feasible. Hence, it is preferable to measure V s indirectly through empirical equations correlating V s with SPT-N value. Although, there are a number of empirical equations developed but these are region specific and cannot be used for all regions. In this paper, an effort has been made to develop new common empirical equations (considering different types of soil) correlating V s and SPT-N value, based on the existing correlations available for different continents collected almost from all regions which will be applicable to any region of the world. Empirical equations have been selected for analysis purpose from 41 different authors published worldwide, where, 26 equations are proposed for all soil types, 25 for sand and 14 are for clay type soil. These equations are selected separately and statistical regression analyses have been carried out to develop new common correlations for each type of soil. The newly developed equations have shown best fit curves with a very high R 2 values, along with minimum variance. As a result, it could be concluded that these newly developed correlations would be very much useful for determining shear wave velocity from known SPT-N value applicable to any region.