Institution
National Institute of Technology, Silchar
Education•Silchar, Assam, India•
About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.
Topics: Computer science, Control theory, PID controller, Electric power system, Artificial neural network
Papers published on a yearly basis
Papers
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TL;DR: Three convergence-based M-ary cardinal metrics are proposed, based on different forms of dominance relations between two solutions, for comparing performances of two optimizers from their multiple runs.
19 citations
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TL;DR: In this paper, the effect of post-deposition annealing on the interfacial and chemical state of ultra-thin hafnium oxide (HfO 2 ) films on p-type Si substrate is reported.
Abstract: Interfacial composition and electrical properties of ultra-thin hafnium oxide (HfO 2 ) films on p-type Si substrate are reported. Hafnium oxide (HfO 2 ) thin films are prepared using radio-frequency sputtering method and subsequently annealed at different temperature. The effect of post-deposition annealing on the interfacial and chemical state of HfO 2 /Si gate stack has been characterised by means of X-ray reflectivity and X-ray photoelectron spectroscopy studies. Peaks of X-ray photoelectron spectroscopy spectra at 530.50 and 532.25 eV originate from Hf–O–Si bond illustrated the creation of Hf-silicate based interfacial layer at the high-k/Si interface. X-ray reflectivity fitting result also corroborated the formation of Hf silicate interfacial layer. Capacitance-voltage measurements revealed insignificant hysteresis in case of film annealed at 600 °C. Interface trap density has been extracted using Terman method and is found to be 3.18×10 −11 cm −2 eV −1 at −1.0 V. Minimum equivalent oxide thickness (EOT) of 1.3 nm was obtained for the film annealed at 600° C. The gate leakage current density of the HfO 2 film annealed at 600 °C is 1.5×10 −5 A/cm 2 at a bias voltage of −2 V.
18 citations
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TL;DR: In this article, the enhancement of heat transfer rate through staggered pin fins of different shapes with different perforation geometries was investigated, namely circular, diamond shaped and elliptical.
Abstract: The present work investigates the enhancement of heat transfer rate through staggered pin fins of different shapes with different perforation geometries, namely circular, diamond shaped and ellipti...
18 citations
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TL;DR: The robustness of optimum gains and other parameters of 2-DOF-PID controller attained at nominal conditions for wide changes in system loading, inertia constant and size, position of step load perturbation are revealed.
Abstract: This paper presents the load frequency control of three area interconnected system. Area1 comprises of thermal and distributed generation (DG) resources. Area2 and area3 are having thermal generations. The DG combination with conventional thermal generation makes the system hybrid. The DG resources comprises of wind turbine generator, diesel engine generator, fuel cell, aqua-electrolyzer and battery energy storage system. The single degree of freedom integral (I), proportional-integral (PI), proportional-integral-derivative (PID) and two degree of freedom-PID (2-DOF-PID) controllers are applied as secondary controllers in the system. These controller gains and other parameters are optimized simultaneously using a new robust and powerful metaheuristic algorithm called symbiotic organisms search (SOS) technique. Studies reveal the better performance of 2-DOF-PID controller over I, PI and PID controllers in terms of reduced peak overshoots, minimum settling time and lesser value of cost function. Comparative performances of various algorithms proves superiority of SOS over others. Sensitivity analysis reveals the robustness of optimum gains and other parameters of 2-DOF-PID controller attained at nominal conditions for wide changes in system loading, inertia constant and size, position of step load perturbation. System dynamics are obtained by considering 1% SLP in area1. The 2-DOF-PID controller also performs satisfactorily in the event of random load perturbation and random wind generator input.
18 citations
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TL;DR: In this article, a single phase multiferroic magnetoelectric compound, (Sm0.5Li 0.5)O3, was fabricated using solid state reaction route and X-ray diffraction method confirmed the fabrication of the desired compound with orthorhombic unit cell structure.
18 citations
Authors
Showing all 2010 results
Name | H-index | Papers | Citations |
---|---|---|---|
Abdullah Gani | 59 | 279 | 15355 |
Subhransu Ranjan Samantaray | 39 | 167 | 4880 |
Subhasish Dey | 39 | 220 | 4755 |
Bithin Datta | 37 | 158 | 3932 |
Arindam Ghosh | 33 | 248 | 6091 |
Raghavan Murugan | 33 | 126 | 3838 |
Md. Ahmaruzzaman | 32 | 113 | 6590 |
Deepak Puthal | 31 | 149 | 3213 |
Sivaji Bandyopadhyay | 31 | 310 | 4436 |
Ibrar Yaqoob | 30 | 77 | 7858 |
Lalit Chandra Saikia | 29 | 121 | 3154 |
Krishnamurthy Muralidhar | 28 | 218 | 2972 |
Sudip Dey | 28 | 155 | 1956 |
Krishna Murari Pandey | 27 | 262 | 2455 |
Shailendra Jain | 27 | 128 | 3907 |