Raytheon

About: Raytheon is a company organization based out in Waltham, Massachusetts, United States. It is known for research contribution in the topics: Signal & Antenna (radio). The organization has 15290 authors who have published 18973 publications receiving 300052 citations.

Tunneling-based SRAM

Abstract: This paper describes a new high-density low-power circuit approach for implementing static random access memory (SRAM) using low current density resonant tunneling diodes (RTDs). After an overview of semiconductor random access memory architecture and technology, the concept of tunneling-based SRAM (TSRAM) is introduced. Experimental results for a compound semiconductor 1-bit 50-nW TSRAM gain cell using low current density (/spl sim/1 A/cm/sup 2/) RTDs and low-leakage heterostructure field effect transistors are presented. We describe a one-transistor TSRAM cell which could convert silicon dynamic RAM (DRAM) to ultradense SRAM if an ultralow current density (/spl sim/1 /spl mu/A/cm/sup 2/) silicon bistable device is developed. Finally, we present experimental and simulation results for a TSRAM cell using multipeaked I-V curve devices and a multivalued word line. This approach aims at increasing storage density through vertical integration of bistable devices such as RTD's.

Coaxial waveguide antenna

Abstract: Processes and systems for radiating electromagnetic energy from an open-ended coaxial cavity are described herein. An antenna assembly includes an open-ended coaxial radiator. The coaxial assembly includes an inner electrically conducting surface and an outer conductive surface spaced apart from and opposing the inner electrically surface. More than one radially aligned electromagnetic coupling modules are positioned at least partially within the coaxial waveguide along different rotation angles. Each of the different electromagnetic coupling modules samples a local electric field, amplifies the sampled field, and alters a phase of at least one of the amplified fields. The amplified, phase-adjusted coaxial fields are radiated from an open end of the coaxial cavity. Although described for transmission mode, the structure can be operated in receive mode by similarly detecting radiated electric fields, amplifying and applying a phase offset, and radiating the amplified, phase offset fields into an open-ended coaxial cavity.

Dynamic wireless resource utilization

Abstract: In one embodiment, a method for dynamic wireless resource utilization includes monitoring a wireless communication resource, generating wireless communication resource data; using the wireless communication resource data, predicting the occurrence of on or more holes in a future time period; generating hole prediction data; using the hole prediction data, synthesizing one or more wireless communication channels from the one or more predicted holes; generating channel synthesis data; receiving data reflecting feedback from a previous wireless communication attempt and data reflecting a network condition; according to the received data and the channel synthesis data, selecting a particular wireless communication channel from the one more synthesized wireless communication channels; generating wireless communication channel selection data; using the wireless communication channel selection data, instructing a radio unit to communicate using the selected wireless communication channel; and instructing the radio unit to discontinue use of the selected wireless communication channel after the communication has been completed.

Integrated test and assembly device

Abstract: A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes. Apertures are then etched in the semiconductor wafer and the metal layer etched as required to provide sharply pointed connecting probes suspended above apertures in the semiconductor wafer.

Apparatus and method for production of organic products from kerogen

Abstract: Apparatus and a method of producing fluid organic products from kerogen in situ in a body of oil shale by the application of alternating electric fields having a frequency between 100 kilohertz and 100 megahertz to heat the kerogen in the oil shale to a temperature in the range of 200° C. to 360° C. and to maintain the kerogen in this temperature range for a period of time sufficient to convert a substantial portion of the kerogen in oil shale to fluid organic products which may be collected through passages produced in the oil shale formation by flowing to a well bore having a collection sump.