University of Electronic Science and Technology of China

About: University of Electronic Science and Technology of China is a education organization based out in Chengdu, China. It is known for research contribution in the topics: Computer science & Antenna (radio). The organization has 50594 authors who have published 58502 publications receiving 711188 citations. The organization is also known as: UESTC.

Regularity and Conformity: Location Prediction Using Heterogeneous Mobility Data

Abstract: Mobility prediction enables appealing proactive experiences for location-aware services and offers essential intelligence to business and governments. Recent studies suggest that human mobility is highly regular and predictable. Additionally, social conformity theory indicates that people's movements are influenced by others. However, existing approaches for location prediction fail to organically combine both the regularity and conformity of human mobility in a unified model, and lack the capacity to incorporate heterogeneous mobility datasets to boost prediction performance. To address these challenges, in this paper we propose a hybrid predictive model integrating both the regularity and conformity of human mobility as well as their mutual reinforcement. In addition, we further elevate the predictive power of our model by learning location profiles from heterogeneous mobility datasets based on a gravity model. We evaluate the proposed model using several city-scale mobility datasets including location check-ins, GPS trajectories of taxis, and public transit data. The experimental results validate that our model significantly outperforms state-of-the-art approaches for mobility prediction in terms of multiple metrics such as accuracy and percentile rank. The results also suggest that the predictability of human mobility is time-varying, e.g., the overall predictability is higher on workdays than holidays while predicting users' unvisited locations is more challenging for workdays than holidays.

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Abstract: Two-dimensional materials (2DMs) are competitive candidates in replacing or supplementing conventional semiconductors owing to their atomically uniform thickness. However, current conventional micro/nanofabrication technologies realize hardly ultrashort channel and integration, especially for sub-10 nm. Meanwhile, experimental device performance associated with the scaling of dimension needs to be investigated, due to the short channel effects. Here, we show a novel and universal technological method to fabricate sub-10 nm gaps with sharp edges and steep sidewalls. The realization of sub-10 nm gaps derives from a corrosion crack along the cleavage plane of Bi2O3. By this method, ultrathin body field-effect transistors (FETs), consisting of 8.2 nm channel length, 6 nm high-k dielectric, and 0.7 nm monolayer MoS2, exhibit no obvious short channel effects. The corresponding current on/off ratio and subthreshold swing reaches to 106 and 140 mV/dec, respectively. Moreover, integrated circuits with sub-10 nm ch...

Rational nanostructure design of graphitic carbon nitride for photocatalytic applications

Abstract: Semiconductor photocatalysts have important applications in the fields of renewable energy production and environmental remediation. To overcome the drawbacks in the photocatalytic process, such as weak photoabsorption, low charge separation efficiency and insufficient surface reactive sites, many strategies have been developed in the past few decades. This review attempts to provide a comprehensive summary and update of some fundamental issues in nanostructure design of graphitic carbon nitride (g-C3N4). We focus especially on recent progress in designing and fabricating g-C3N4 photocatalysts with various dimensional structures, such as zero-dimensional quantum dots, one-dimensional nanorods and nanotubes, two-dimensional nanosheets, and three-dimensional nanospheres and nanoflowers, identifying the key factors in determining the photocatalytic efficiency, enumerating the wide range of new applications of g-C3N4 photocatalysts, and finally highlighting the crucial issues that should be addressed in the future in the aforementioned interesting research areas.