Journal ArticleDOI
A Digitally Calibrated Bandgap Reference With 0.06% Error for Low-Side Current Sensing Application
TLDR
A design of an on-chip precision bandgap reference with a digitally calibrated technique is described and Experimental results show that a maximum of 0.06% variation in the bandgap output for a temperature range of −40 °C–100 °C at a power supply voltage of 3.3 V is achieved.Abstract:
Accurate current and voltage measurements are essential for estimating the state of charge of an automotive battery Typically, circuits are designed to measure low-side current of lead-acid battery These circuits, however, require a precision reference voltage across a temperature range In this paper, a design of an on-chip precision bandgap reference with a digitally calibrated technique is described The bandgap is trimmed for temperature and magnitude and is calibrated digitally Experimental results show that a maximum of 006% variation in the bandgap output for a temperature range of −40 °C–100 °C at a power supply voltage of 33 V is achieved The integrated circuit is fabricated in 035- $\mu \text{m}$ standard CMOS technology and occupies an area of 023 mm2read more
Citations
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Journal ArticleDOI
A 1.16-V 5.8-to-13.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference Circuit With a Shared Offset-Cancellation Method for Internal Amplifiers
TL;DR: An accurate current-mode bandgap reference circuit design with a novel shared offset compensation scheme for its internal amplifiers that allows to conserve die size and power consumption by preventing that each amplifier is accompanied by its own active auxiliary offset-cancellation circuit.
Journal ArticleDOI
A 7-Cell, Stackable, Li-Ion Monitoring and Active/Passive Balancing IC With In-Built Cell Balancing Switches for Electric and Hybrid Vehicles
Veeresh Babu Vulligaddala,Sandeep Vernekar,Sudhakar Singamla,Ravi Kumar Adusumalli,Vijay Ele,Manfred Brandl,Srinivas M.B +6 more
TL;DR: An integrated circuit consisting of a 12-bit successive approximation register (SAR) analog-to-digital converter is designed to measure, monitor, and balance Li-ion cell voltages with a measured accuracy of 7 mV.
Journal ArticleDOI
A −40 °C to 140 °C Picowatt CMOS Voltage Reference With 0.25-V Power Supply
TL;DR: This brief presents a picowatt CMOS voltage reference with ultra-low supply and wide temperature range, Biased by PMOS leakage current,Ultra-low voltage and ultra- low power consumption are achieved.
Journal ArticleDOI
A low-power native NMOS-based bandgap reference operating from −55°C to 125°C with Li-Ion battery compatibility
Journal ArticleDOI
A high-order curvature compensated voltage reference based on lateral BJT
TL;DR: In this article, a curvature compensated voltage reference (VR) based on lateral PNP bipolar junction transistor (BJT) is proposed for temperature curvature compensation, which consists of two first-order current-mode band gap references and a subtraction circuit.
References
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Journal ArticleDOI
Curvature-compensated BiCMOS bandgap with 1-V supply voltage
TL;DR: A bandgap circuit capable of generating a reference voltage of 0.54 V is presented, implemented in a submicron BiCMOS technology, and achieves 5 ppm / K of accuracy without requiring additional operational amplifiers or complex circuits.
Book
Precision Temperature Sensors in CMOS Technology
TL;DR: This work focused on settling Transients from VBE1 ' 0 to VBE2 .
Proceedings ArticleDOI
A single-trim CMOS bandgap reference with a 3σ inaccuracy of ±0.15% from −40°C to 125°C
TL;DR: This paper describes a CMOS bandgap reference with an inaccuracy of ±0.15% (3σ) from −40°C to 125°C, obtained by using chopping and curvature correction to minimize non-PTAT (proportional-to-absolute-temperature) errors, and canceling residual PTAT errors with a single room-tem temperature trim.
Journal ArticleDOI
A 1.4 V Supply CMOS Fractional Bandgap Reference
TL;DR: A bandgap reference that outputs a fraction of the silicon bandgap voltage to simplify the design of an internal operational amplifier and dissipates 162 muW and occupies 1.2 mm2 in 0.35 mum CMOS.
Journal ArticleDOI
A Current-Feedback Instrumentation Amplifier With 5 $\mu{\hbox{V}}$ Offset for Bidirectional High-Side Current-Sensing
TL;DR: An instrumentation amplifier for bidirectional high-side current-sensing applications using a multipath indirect current-feedback topology that employs a combination of chopping and auto-zeroing in a low frequency path to cancel the offset of a wide-band amplifier in a high frequency path.