A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
Bao-Wang Su,Bin-Wei Yao,Xi-Lin Zhang,Kai-Xuan Huang,De-Kang Li,Hao-Wei Guo,Xiao-Kuan Li,Xu-Dong Chen,Zhi-Bo Liu,Zhi-Bo Liu,Jianguo Tian,Jianguo Tian +11 more
- Vol. 2, Iss: 4, pp 1733-1740
TLDR
In this article, a symmetric bipolar junction transistor (SBJT) was constructed from black phosphorus and MoS2 with femtosecond laser processing, which exhibits good bidirectional current amplification owing to its symmetric structure.Abstract:
Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.read more
Citations
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Journal Article
Black Phosphorus Field-effect Transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI
Laser-assisted two dimensional material electronic and optoelectronic devices
Bao-Wang Su,Xi-Lin Zhang,Wei Xin,Wei Xin,Hao-Wei Guo,Yu-Zhe Zhang,Zhi-Bo Liu,Zhi-Bo Liu,Jianguo Tian,Jianguo Tian +9 more
TL;DR: In this paper, the current advances in laser processing-assisted 2D material electronic and optoelectronic devices are reviewed and a comprehensive outlook on the future development of 2D materials nanoelectronics/optoelectronics via laser processing is also presented.
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2D Cu 9 S 5 /PtS 2 /WSe 2 Double Heterojunction Bipolar Transistor with High Current Gain.
Sanjun Yang,Lejing Pi,Liang Li,Kailang Liu,Ke Pei,Wei Han,Fakun Wang,Fuwei Zhuge,Huiqiao Li,Gang Cheng,Tianyou Zhai +10 more
TL;DR: In this paper, a double heterojunction bipolar transistor (DHBT) with high-doping-density widebandgap 2D Cu9 S5 is used as emitter and narrowbandgap PtS2 as base.
Journal ArticleDOI
Crystal cleavage, periodic nanostructure and surface modification of SiC ablated by femtosecond laser in different media
Chen Wu,Xudong Fang,Qiang Kang,Hao Sun,Libo Zhao,Bian Tian,Ziyan Fang,Maolin Pan,Ryutaro Maeda,Zhuangde Jiang +9 more
TL;DR: In this paper, a femtosecond laser-induced periodic structure of SiC surface based on material lattice cleavage was established, and the relationship between the intrinsic texture and the evolution of periodic structure was revealed.
Journal ArticleDOI
Laser Writable Multifunctional van der Waals Heterostructures.
Bao-Wang Su,Xi-Lin Zhang,Bin-Wei Yao,Hao-Wei Guo,De-Kang Li,Xu-Dong Chen,Zhi-Bo Liu,Zhi-Bo Liu,Jianguo Tian,Jianguo Tian +9 more
TL;DR: A novel, cost-effective, and universal method to fabricate multifunctional nanoelectronic devices, which exhibits promise for large-scale integrated circuits based on 2D heterostructures is demonstrated.
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