Journal ArticleDOI
Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals
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This article is published in Advanced Functional Materials.The article was published on 2019-04-01. It has received 45 citations till now. The article focuses on the topics: van der Waals force & Bipolar junction transistor.read more
Citations
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Emerging van der Waals junctions based on TMDs materials for advanced gas sensors
TL;DR: In this article, the design and application of van der Waals (vdW) junctions based on W and Mo-TMDs materials for gas sensors are comprehensively overviewed and the most recent advances of vdW junctions in the chemical gas sensor applications are summarized.
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Van der Waals Heterostructures by Design: From 1D and 2D to 3D
TL;DR: The use of van der Waals (VDW) force allows a bond-free strategy to integrate a wide range of materials, including zero-dimensional nanoparticles, one-dimensional (1D) nanowires, two-dimensional nanosheets, and three-dimensional bulk materials, beyond the reach of conventional heterostructures.
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Emerging Opportunities for Electrostatic Control in Atomically Thin Devices.
Megan E. Beck,Mark C. Hersam +1 more
TL;DR: In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed and high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.
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Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2 .
Amir Muhammad Afzal,Muhammad Zahir Iqbal,Ghulam Dastgeer,Ghulam Dastgeer,Aqrab ul Ahmad,Byoungchoo Park +5 more
TL;DR: Such TMD‐based vdWH FETs would improve the photo‐gating characteristics and provide a platform for the realization of a highly sensitive photodetector in the broad VNIR region.
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WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times.
Amir Muhammad Afzal,Amir Muhammad Afzal,Muhammad Zahir Iqbal,Ghulam Dastgeer,Ghazanfar Nazir,Sohail Mumtaz,Muhammad Usman,Jonghwa Eom +7 more
TL;DR: A novel and compact vertically stacked two-dimensional n- WS2/p-GeSe/n-WS2 van der Waals (vdW) heterojunction bipolar transistor (2D-HBT)-based chemical sensor for gas sensors with huge potential in modern technology in the development of low-power amplifiers and gas sensors.
References
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Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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2D materials and van der Waals heterostructures
TL;DR: Two-dimensional heterostructures with extended range of functionalities yields a range of possible applications, and spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system.
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Anomalous lattice vibrations of single- and few-layer MoS2.
TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
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Single-Layer MoS2 Phototransistors
Zongyou Yin,Hai Li,Hong Li,Lin Jiang,Yumeng Shi,Yinghui Sun,Gang Lu,Qing Zhang,Xiaodong Chen,Hua Zhang +9 more
TL;DR: The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
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Strong light-matter interactions in heterostructures of atomically thin films.
L. Britnell,Ricardo M. Ribeiro,Ricardo M. Ribeiro,Axel Eckmann,Rashid Jalil,Branson D. Belle,Artem Mishchenko,Yong-Jin Kim,Yong-Jin Kim,Roman V. Gorbachev,Thanasis Georgiou,Sergey V. Morozov,Alexander N. Grigorenko,Andre K. Geim,Cinzia Casiraghi,Cinzia Casiraghi,A. H. Castro Neto,K. S. Novoselov +17 more
TL;DR: Transition metal dichalcogenides sandwiched between two layers of graphene produce an enhanced photoresponse, which allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).