Journal ArticleDOI
AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current
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TLDR
In this paper, a hybrid Schottky-ohmic drain structure is proposed for AlGaN/GaN high-electron-mobility transistors on a Si substrate, which forms a Γ-shaped electrode to smooth the electric field distribution at the drain side, which improves the breakdown voltage and lowers the leakage current.Abstract:
In this letter, a hybrid Schottky-ohmic drain structure is proposed for AlGaN/GaN high-electron-mobility transistors on a Si substrate. Without additional photomasks and extra process steps, the hybrid drain design forms a Γ-shaped electrode to smooth the electric field distribution at the drain side, which improves the breakdown voltage and lowers the leakage current. In addition, the hybrid drain provides an auxiliary current path and decreases the on-resistance, in contrast to the devices with a pure Schottky drain. Compared with the conventional ohmic drain devices, the breakdown voltage could be improved up to 64.9%, and the leakage current is suppressed by one order of magnitude without degradation of the specific on-resistance.read more
Citations
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Journal ArticleDOI
AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking
TL;DR: In this paper, a selective Si diffusion approach is proposed to improve both the forward and reverse characteristics of AlGaN/GaN Schottky barrier diodes on Si substrates.
Journal ArticleDOI
High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate
Jun Ma,Elison Matioli +1 more
TL;DR: High-performance GaN power metal–oxide–semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture are demonstrated, rendering excellent high-power figure of merits (FOMs) up to 1.25 GW/cm.
Proceedings ArticleDOI
Understanding switching variability and random telegraph noise in resistive RAM
Stefano Ambrogio,Simone Balatti,Antonio Cubeta,Alessandro Calderoni,Nirmal Ramaswamy,Daniele Ielmini +5 more
TL;DR: In this paper, an analytical model for resistance variability in set and reset states is presented, and random telegraph noise (RTN) is discussed in terms of trap-induced depletion in the conductive filament (CF).
Journal ArticleDOI
Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate
TL;DR: In this article, the effect of geometrical variables of FP and insulator layer on electric field distribution and VBD is investigated systematically, and a 2D simulation of off-state breakdown voltage for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented.
Journal ArticleDOI
Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD – R ON Tradeoff and RF PA Performance
TL;DR: In this paper, the breakdown behavior of drain-connected field plate-based GaN HEMTs was investigated and the proposed vertical and dual-field-plate designs were proposed to alleviate the channel electric field by uniformly distributing it vertically into the buffer region.
References
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Journal ArticleDOI
Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
TL;DR: In this article, the authors achieved a 9?m-thick AlGaN/GaN high-electron mobility transistor (HEMT) epilayer on silicon using thick buffer layers with reduced dislocation density (DD).
Journal ArticleDOI
Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon
TL;DR: In this article, the enhancement of device performance with AlN buffer thickness (200 and 300nm) is due to the reduction of electrically active defects from Si substrate, which is confirmed by x-ray rocking curve measurements.
Journal ArticleDOI
Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si
TL;DR: In this article, the vertical breakdown of high-electron-mobility transistors (HEMTs) is analyzed with respect to i-GaN thickness (TGaN) and buffer thickness (TBuf).
Journal ArticleDOI
Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal
Puneet Srivastava,J. Das,Domenica Visalli,Marleen Van Hove,Pawel E. Malinowski,Denis Marcon,Silvia Lenci,Karen Geens,Kai Cheng,Maarten Leys,Stefaan Decoutere,Robert Mertens,Gustaaf Borghs +12 more
TL;DR: In this paper, the authors present a local substrate removal technology (under the source-to-drain region) reminiscent of through-silicon vias and report on the highest ever achieved breakdown voltage (VBD) of AlGaN/GaNs/AlGaN double heterostructure FETs on a Si (111) substrate with only 2-μm-thick buffer.
Journal ArticleDOI
The Effect of an Fe-doped GaN Buffer on off -State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate
TL;DR: In this article, an Fe-doped GaN buffer layer was employed in the growth of AlGaN/GaN high-electron mobility transistors (HEMTs) on Si substrates.