Journal ArticleDOI
Band-Structure Lineup at In0:2Ga0:8N/Si Heterostructures by X-ray Photoelectron Spectroscopy
Mahesh Kumar,Basanta Roul,Basanta Roul,Thirumaleshwara N. Bhat,Mohana K. Rajpalke,A. T. Kalghatgi,S. B. Krupanidhi +6 more
TLDR
In this article, high-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions.Abstract:
In0.2Ga0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08 +/- 0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found similar to 0.74 eV and a type-II heterojunction. (C) 2012 The Japan Society of Applied Physicsread more
Citations
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Journal ArticleDOI
Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector.
Arun Malla Chowdhury,Greeshma Chandan,Rohit Pant,Basanta Roul,Basanta Roul,Deependra Kumar Singh,Karuna Kar Nanda,S. B. Krupanidhi +7 more
TL;DR: A self-powered, broad band and ultrafast photodetector based on n+-InGaN/AlN/n-Si(111) heterostructure is demonstrated and a relation between the open circuit voltage and the responsivity has been realized.
Journal ArticleDOI
Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions
Mahesh Kumar,Mahesh Kumar,Basanta Roul,Basanta Roul,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,A. T. Kalghatgi,S. B. Krupanidhi +7 more
TL;DR: The temperature dependent electrical transport behavior of n-n InGaN/Si heterostructures grown by plasma-assisted MBE was studied in this paper, where structural characteristics of the epilayers were evaluated high-resolution X-ray diffraction and composition of InGaNs was estimated from photoluminescence spectra using standard Vegard's law.
Journal ArticleDOI
Temperature Dependent “S-Shaped” Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment
Arun Malla Chowdhury,Basanta Roul,Basanta Roul,Deependra Kumar Singh,Rohit Pant,Karuna Kar Nanda,S. B. Krupanidhi +6 more
TL;DR: In this article, temperature-dependent photoluminescence measurements are reported for n+ and n-type InGaN nanolayers grown by plasma-assisted molecular beam epitaxy (PAMBE) on AlN/n-Si template.
Journal ArticleDOI
Industrial applications of X-Ray Photoelectron Spectroscopy (XPS) in India
TL;DR: A review of industrial applications of X-ray excited Auger electron spectroscopy (XPS) in India from open literature is presented in this article, where the authors highlight a few key points that must be considered while measuring and interpreting XPS data.
References
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Unusual properties of the fundamental band gap of InN
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Yoshiki Saito,Yasushi Nanishi +8 more
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
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III–nitrides: Growth, characterization, and properties
TL;DR: In this article, the splitting of the valence band by crystal field and spin-orbit interaction has been calculated and measured, and the measured values agree with the calculated values and the effects of strain on the splitting and optical properties have been studied in detail.
Journal ArticleDOI
Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
TL;DR: In this article, a method for locating the valence-band edge in x-ray photo-emission spectra is reported. But this method is not suitable for measuring semiconductor interface potentials.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Design and characterization of GaN∕InGaN solar cells
TL;DR: In this article, the III-V nitrides were used as a high-performance photovoltaic material with open-circuit voltages up to 2.4V and internal quantum efficiencies as high as 60%.