Journal ArticleDOI
Carbon nanotube electronics
Joerg Appenzeller,Joachim Knoch,Richard Martel,Vincent Derycke,Shalom J. Wind,Phaedon Avouris +5 more
- Vol. 1, Iss: 4, pp 184-189
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TLDR
In this paper, single-wall carbon nanotube field effect transistors (CNFETs) operating at gate and drain voltages below 1V were investigated and it was shown that CNFET operation is controlled by Schottky barriers (SBs) in the source and drain region instead of by the nanotubes itself.Abstract:
Presents experimental results on single-wall carbon nanotube field-effect transistors (CNFETs) operating at gate and drain voltages below 1V. Taking into account the extremely small diameter of the semiconducting tubes used as active components, electrical characteristics are comparable with state-of-the-art metal oxide semiconductor field-effect transistors (MOSFETs). While output as well as subthreshold characteristics resemble those of conventional MOSFETs, we find that CNFET operation is actually controlled by Schottky barriers (SBs) in the source and drain region instead of by the nanotube itself. Due to the small size of the contact region between the electrode and the nanotube, these barriers can be extremely thin, enabling good performance of SB-CNFETs.read more
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Journal ArticleDOI
Environmental applications of carbon-based nanomaterials.
TL;DR: This review critically assesses the contributions of carbon-based nanomaterials to a broad range of environmental applications: sorbents, high-flux membranes, depth filters, antimicrobial agents, environmental sensors, renewable energy technologies, and pollution prevention strategies.
Journal ArticleDOI
Epitaxial Graphene Transistors on SiC Substrates
Jakub Kedzierski,Pei-Lan Hsu,P. Healey,Peter W. Wyatt,Craig L. Keast,Mike Sprinkle,Claire Berger,W. A. de Heer +7 more
TL;DR: In this article, the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material was described and the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods.
Journal ArticleDOI
Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design
TL;DR: In this article, three different carbon nanotube (CN) field effect transistor (CNFET) designs are compared by simulation and experiment, and the authors explore the possibility of using CNs as gate-controlled tunneling devices.
Journal ArticleDOI
Current and Future Challenges in Radiation Effects on CMOS Electronics
TL;DR: In this paper, the authors examine the impact of recent developments and the challenges they present to the radiation effects community and discuss future radiation effects challenges as the electronics industry looks beyond Moore's law to alternatives to traditional CMOS technologies.
Journal ArticleDOI
Carbon nanotubes based transistors as gas sensors: State of the art and critical review
TL;DR: The physical interpretation of the interaction between the gas molecules and the carbon nanotube field effect transistors (CNTFETs) has not been clarified yet as mentioned in this paper, and the authors try to find some consistency between the physical interpretations advanced by the different scientific teams working on the subject and to answer some unsolved questions.
References
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Journal ArticleDOI
Helical microtubules of graphitic carbon
TL;DR: Iijima et al. as mentioned in this paper reported the preparation of a new type of finite carbon structure consisting of needle-like tubes, which were produced using an arc-discharge evaporation method similar to that used for fullerene synthesis.
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Carbon Nanotubes--the Route Toward Applications
TL;DR: Many potential applications have been proposed for carbon nanotubes, including conductive and high-strength composites; energy storage and energy conversion devices; sensors; field emission displays and radiation sources; hydrogen storage media; and nanometer-sized semiconductor devices, probes, and interconnects.
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Room-temperature transistor based on a single carbon nanotube
TL;DR: In this paper, the fabrication of a three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics and has attracted much interest, particularly because it could lead to new miniaturization strategies in the electronics and computer industry.
Journal ArticleDOI
Crystalline Ropes of Metallic Carbon Nanotubes
Andreas Thess,R. S. Lee,Pavel Nikolaev,Hongjie Dai,Pierre Petit,J. Robert,Chunhui Xu,Young Hee Lee,Seong-Gon Kim,Andrew G. Rinzler,Daniel T. Colbert,Gustavo E. Scuseria,David Tománek,John E. Fischer,Richard E. Smalley +14 more
TL;DR: X-ray diffraction and electron microscopy showed that fullerene single-wall nanotubes (SWNTs) are nearly uniform in diameter and that they self-organize into “ropes,” which consist of 100 to 500 SWNTs in a two-dimensional triangular lattice with a lattice constant of 17 angstroms.
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Large-scale synthesis of carbon nanotubes
TL;DR: In this article, the authors used a variant of the standard arc-discharge technique for fullerene synthesis under a helium atmosphere, where a carbonaceous deposit formed on one of the graphite rods, consisting of a macroscopic (diameter of about 5 mm) cylinder.