CdS Thin Film Transistor for Inverter and Operational Amplifier Circuit Applications
W. Wondmagegn,Israel Mejia,A. L. Salas-Villasenor,H. J. Stiegler,Manuel Quevedo-Lopez,Ronald J. Pieper,Bruce E. Gnade +6 more
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TLDR
In this paper, organic and inorganic thin film transistors (TFTs) are fabricated, simulated, and tested for circuit applications and two-dimensional finite element simulation methodology is used.About:
This article is published in Microelectronic Engineering.The article was published on 2016-05-01 and is currently open access. It has received 50 citations till now. The article focuses on the topics: Operational amplifier & Transistor.read more
Citations
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Effect of substrate and Zn doping on the structural, optical and electrical properties of CdS thin films prepared by CBD method
TL;DR: In this article, the effect of substrate and Zn concentration on the crystallization behavior and optical and electrical properties of the CdS thin films by X-ray diffraction, atomic force microscope, Xray photoelectron spectroscopic, Raman scattering, UV-vis spectrophotometer, and transportation measurement system was investigated.
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The effect of Cu-doping on CdS thin films deposited by the spray pyrolysis technique
TL;DR: In this article, pure CdS and Cu-doped thin films were deposited using the spray pyrolysis technique and characterized using XRD, XPS, AFM, UV-VIS spectroscopy and two probe DC-conductivity measurements.
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Linear and Nonlinear Optics of CBD Grown Nanocrystalline F Doped CdS Thin Films for Optoelectronic Applications: An Effect of Thickness
TL;DR: In this article, a significant influence of thickness on physical properties of fluorine-doped cadmium sulfide (CdS) thin films with different thicknesses was observed.
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Role of facile synthesized V2O5 as hole transport layer for CdS/CdTe heterojunction solar cell: Validation of simulation using experimental data
TL;DR: In this paper, the role of Vanadium Pentoxide (V2O5) as electron blocking-hole transport layer (EB-HTL) in Cadmium Sulfide (CdS), CdTe and CdAl based heterojunction solar cells using simulation employing experimental data was presented.
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Enhancement in the optical and electrical properties of CdS thin films through Ga and K co-doping
TL;DR: In this article, the influence of K-doping on structural, morphological, optical and electrical properties of CdS:Ga thin films are examined, which can be used for solar cell devices.
References
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Effects of longitudinal and latitudinal grain boundaries on the performance of large-grain polysilicon MOSFET
TL;DR: In this paper, the effects of longitudinal and latitudinal polysilicon grain boundaries on the performance of metal oxide semiconductor field effect transistors (MOSFETs) fabricated on large-grain poly-silicon-on-insulator (LPSOI) have been investigated.
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Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film Transistors
Israel Mejia,A. L. Salas-Villasenor,Dongkyu Cha,Husam N. Alshareef,Bruce E. Gnade,Manuel Quevedo-Lopez +5 more
TL;DR: In this article, the authors report photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques.
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CMOS TFT Op-Amps: Performance and Limitations
TL;DR: In this paper, the authors demonstrate the feasibility of building thin-film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) operational amplifiers (op-amps) at low temperature (180°C) for large-area sensor applications.
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Implications of the change in work function of chromium by the presence of hydrogen on the properties of electrical contact between chromium and hydrogenated amorphous silicon
TL;DR: In this article, the consequences of hydrogenation of metals, which occurs when they are used as electrical contacts in solar cells made from hydrogenated amorphous silicon, are discussed.
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An Analytical Expression for the Transfer Characteristics of a Polycrystalline Silicon Thin-Film Transistor With an Undoped Channel
Thomas Chow,Man Wong +1 more
TL;DR: In this paper, an analytical model for the transfer characteristics of a polycrystalline silicon thin-film transistor (TFT) with an undoped channel is developed based on the observation that the trap states in a grain boundary are exponentially dispersed over the energy space defined by the energy gap of the adjacent grains.