Journal ArticleDOI
Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass
Reads0
Chats0
TLDR
In this paper, a single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique.Abstract:
Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect mobility (/spl sim/430 cm/sup 2//Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.read more
Citations
More filters
Patent
System comprising a semiconductor device and structure
Zvi Or-Bach,Brian Cronquist,Israel Beinglass,Jan Lodewijk de Jong,Deepak C. Sekar,Zeev Wurman +5 more
TL;DR: In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Patent
Semiconductor device and structure
Zvi Or-Bach,Brian Cronquist +1 more
TL;DR: In this paper, a first layer and a second layer of layer-transferred mono-crystallized silicon, where the first layer comprises a first plurality of horizontally-oriented transistors, and the second layer includes a second plurality of vertically oriented transistors.
Patent
Method for fabrication of a semiconductor device and structure
TL;DR: In this article, a method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a metal layer overlaying the first layer and providing at least one connection to the first Transistors, and finally processing a second layer of second transistors overlaying a first metal layer, wherein the second metal layer is connected to provide power to at least 1 of the second Transistors.
Patent
Method and structure for fabricating solar cells using a layer transfer process
TL;DR: In this paper, an optical coupling material is provided between the first surface region of the thickness of the material and the second surface of the optically transparent material, where the surface region is overlying the first one.
Patent
3D semiconductor device and structure
TL;DR: In this article, an Integrated Circuit device including a first layer including first single crystal transistors; a second layer overlaying the first layer, the second layer including second single-crystal transistors, where the second-layer thickness is less than one micron, where a plurality of the first transistors is circumscribed by a first dice lane of at least 10 microns width, and there are no first conductive connections to the plurality of transistors that cross the first-dice lane.
References
More filters
Journal ArticleDOI
Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO2
TL;DR: In this paper, a low-temperature bonding of wafers was studied utilizing reactive ion etching-mode plasma activation, where the hydrophilic Si and thermally oxidized Si wafer were exposed to N 2, Ar, or O 2 plasma prior to bonding in air or vacuum.
Journal ArticleDOI
Nickel induced crystallization of amorphous silicon thin films
TL;DR: In this paper, a-Si under and near the Ni-covered regions was found to be crystallized after heat treatment at 500 ˚°C from 1 to 90 h.
Journal ArticleDOI
High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications
TL;DR: In this paper, a metal-induced-unilateral crystallization (MIUC) was proposed to remove from the edges of and within the channel region all major grain boundaries transverse to the drain current flow.
Journal ArticleDOI
Cold ion-cutting of hydrogen implanted Si
Kimmo Henttinen,Tommi Suni,A. Nurmela,Ilkka Suni,S. S. Lau,T. Höchbauer,Michael Nastasi,V.-M. Airaksinen +7 more
TL;DR: In this article, the authors investigated the influence of boron and arsenic doping on the mechanical exfoliation of H-implanted Si wafers and found that the exfolation takes place closer to the wafer surface in highly borone doped Si as compared to the undoped Si.
Journal ArticleDOI
Single crystal Si layers on glass formed by ion cutting
M. Cai,D. Qiao,L. S. Yu,S. S. Lau,C. P. Li,L. S. Hung,T. E. Haynes,Kimmo Henttinen,Ilkka Suni,V. M. C. Poon,T. Marek,James W. Mayer +11 more
TL;DR: In this article, the process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications and it was found that p-Si wafers implanted at 100-150 ° C with H with a dose in the order of a few times 10 16 cm −2 could be readily bonded to glass substrates when both of the surfaces were properly treated and activated.