Journal ArticleDOI
Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance
Kai Ni,Pankaj Sharma,Jianchi Zhang,Matthew Jerry,Jeffery A. Smith,Kandabara Tapily,Robert D. Clark,Souvik Mahapatra,Suman Datta +8 more
TLDR
In this paper, the critical design criteria of Hf0.5Zr 0.5O2 (HZO)-based ferroelectric field effect transistor (FeFET) for nonvolatile memory application were established.Abstract:
We fabricate, characterize, and establish the critical design criteria of Hf0.5Zr0.5O2 (HZO)-based ferroelectric field effect transistor (FeFET) for nonvolatile memory application. We quantify ${V}_{\textsf {TH}}$ shift from electron (hole) trapping in the vicinity of ferroelectric (FE)/interlayer (IL) interface, induced by erase (program) pulse, and ${V}_{\textsf {TH}}$ shift from polarization switching to determine true memory window (MW). The devices exhibit extrapolated retention up to 10 years at 85 °C and endurance up to $5\times 10^{6}$ cycles initiated by the IL breakdown. Endurance up to 1012 cycles of partial polarization switching is shown in metal–FE–metal capacitor, in the absence of IL. A comprehensive metal–FE–insulator–semiconductor FeFET model is developed to quantify the electric field distribution in the gate-stack, and an IL design guideline is established to markedly enhance MW, retention characteristics, and cycling endurance.read more
Citations
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A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
Journal ArticleDOI
The era of hyper-scaling in electronics
TL;DR: This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration and heterogeneous integration techniques.
Journal ArticleDOI
Ferroelectric Analog Synaptic Transistors
Min-Kyu Kim,Jang-Sik Lee +1 more
TL;DR: The analog conductance modulation behavior in the ferroElectric thin-film transistors (FeTFT) that have the nanoscale ferroelectric material and oxide semiconductors is demonstrated to demonstrate linear potentiation and depression characteristics of FeTFTs.
Journal ArticleDOI
The future of ferroelectric field-effect transistor technology
TL;DR: In this article, the authors examine the potential of the ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models.
Journal ArticleDOI
Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films: A Review of Recent Advances
TL;DR: In this paper, recent advances in the ferroelectric properties of HZO thin films, including doping effects, mechanical stress effects, interface effects, and film thickness effects, are comprehensively reviewed.
References
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Journal ArticleDOI
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller,T. S. Böscke,Uwe Schröder,Stefan Mueller,D. Bräuhaus,Ulrich Böttger,Lothar Frey,Thomas Mikolajick +7 more
TL;DR: A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
Journal ArticleDOI
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
Min Hyuk Park,Young Hwan Lee,Han Joon Kim,Yu Jin Kim,Taehwan Moon,Keum Do Kim,Johannes Müller,Alfred Kersch,Uwe Schroeder,Thomas Mikolajick,Cheol Seong Hwang +10 more
TL;DR: The coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.
Journal ArticleDOI
Defect energy levels in HfO2 high-dielectric-constant gate oxide
TL;DR: In this paper, the energy levels of the oxygen vacancy and oxygen interstitial defects in HfO2 were calculated using density functional methods that do not need an empirical band gap correction.
Proceedings ArticleDOI
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Johannes Müller,T. S. Boscke,Stefan Müller,Ekaterina Yurchuk,P. Polakowski,Jan Paul,Dominik Martin,Tony Schenk,K. Khullar,A. Kersch,Wenke Weinreich,S. Riedel,Konrad Seidel,Amit Kumar,Thomas M. Arruda,Sergei V. Kalinin,Till Schlösser,Roman Boschke,R. van Bentum,Uwe Schröder,Thomas Mikolajick +20 more
TL;DR: In this paper, the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment.
Journal ArticleDOI
Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
Halid Mulaosmanovic,J. Ocker,Stefan Müller,Uwe Schroeder,Johannes Müller,P. Polakowski,Stefan Flachowsky,Ralf van Bentum,Thomas Mikolajick,Stefan Slesazeck +9 more
TL;DR: It is demonstrated that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors and suggested opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices are suggested.