Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process
TLDR
In this article, the authors have designed and fabricated GaN static induction transistor using self-aligned technology, which was accomplished mainly by using a SiO2 lift-off step in buffered oxide etch (BOE).Abstract:
The rapid development of RF power electronics requires amplifier operating at high frequency with high output power. GaN-based HEMTs as RF devices have made continuous progress in the last two decades showing great potential for working up to G band range. However, vertical structure is preferred to obtain higher output power. In this paper, we have designed and fabricated GaN static induction transistor using the self-aligned technology, which was accomplished mainly by using a SiO2 lift-off step in buffered oxide etch (BOE). By optimizing the time in ultrasonic bath and in BOE, the SiO2 and the metal on top were removed completely which resulted in the gate metal only on the sidewalls. Both dry and wet etch techniques were investigated to reduce the gate leakage on the etched surface. The low power dry etch combined with the tetramethylammonium hydroxide wet etch can effectively reduce the etch damages, decrease the gate leakage and enhance the gate control over the channel.read more
Citations
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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
Koon Hoo Teo,Yuhao Zhang,Nadim Chowdhury,Shaloo Rakheja,Rui Ma,Qingyun Xie,Eiji Yagyu,Koji Yamanaka,Kexin Li,Tomas Palacios +9 more
TL;DR: In this article, the authors provide a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability, which is a key missing piece to realize the full GaN platform with integrated digital, power, and RF electronics technologies.
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(Ultra)Wide-Bandgap Vertical Power FinFETs
Yuhao Zhang,Tomas Palacios +1 more
TL;DR: A comprehensive tutorial and review of the background and recent advances in widebandgap and ultrawide-bandgap (UWBG) vertical power FinFETs is provided in this article.
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880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates
TL;DR: In this paper, a high-voltage metal-insulator-semiconductor gate trench current aperture vertical electron transistor using metal-organic chemical vapor deposition regrown AlGaN/GaN as the channel and in-situ Si3N4 as the gate dielectric was reported.
Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.
TL;DR: In this article, a mechanism responsible for reduced current collapse by field plate length was proposed, in which the key role is played during ON-state by the quick field-effect recovery of partial channel depletion caused by electron trapping at AlGaN surface states between gate and drain.
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Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications
Hong Chen,Houqiang Fu,Xuanqi Huang,Xiaodong Zhang,Tsung-Han Yang,Jossue Montes,Izak Baranowski,Yuji Zhao +7 more
TL;DR: Experimental results are consistent with the theoretical findings, showing that under high power injection the optical loss changed significantly for GaN waveguide, which is the lowest value ever reported for the visible spectral range.
References
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Journal ArticleDOI
GaN-Based RF Power Devices and Amplifiers
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
Journal ArticleDOI
Field-effect transistor versus analog transistor (static induction transistor)
TL;DR: The Static Induction Transistor (SIT) as discussed by the authors is a transistor similar to that of the vacuum tube triode type that exhibits the nonsaturated build-up character only when the internal negative feedback action is as little as G{m'} \simeq G_{m}.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
AlGaN/GaN HEMT With 300-GHz $f_{\max}$
TL;DR: In this paper, a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) with a SiC substrate with a record power-gain cutoff frequency (fmax) was reported.
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Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
TL;DR: In this paper, an effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) was presented, which features an AlN thin film grown by plasma-enhanced atomic layer deposition (PEALD).