Journal ArticleDOI
Electrical characteristics of solution‐processed InGaZnO thin film transistors depending on Ga concentration
TLDR
In this paper, the role of Ga in solution-processed InGaZnO thin-film transistors was investigated, and it was verified that the vacancy-related oxygen Is peak was decreased when the Ga content increased.Abstract:
We investigated the role of Ga in solution-processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off-current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carried suppressor. It was verified, using X-ray photoelectron spectroscopy (XPS), that the vacancy-related oxygen Is peak was decreased when the Ga content increased.read more
Citations
More filters
Journal ArticleDOI
Solution processing of transparent conductors: from flask to film
TL;DR: This critical review focuses on the solution deposition of transparent conductors with a particular focus on transparent conducting oxide (TCO) thin-films, with an introduction into the applications of and material criteria for TCOs.
Journal ArticleDOI
Low-temperature, solution-processed metal oxide thin film transistors
Sunho Jeong,Jooho Moon +1 more
TL;DR: In this paper, the authors review the recent progress in the development of high-performance oxide semiconductors processed at low temperatures which are compatible with plastic substrates and discuss the chemical/physical approaches to lower the annealing temperature.
Journal ArticleDOI
Review of solution-processed oxide thin-film transistors
TL;DR: In this paper, the authors summarize solution-processed oxide thin-film transistors (TFTs) researches based on their fulfillments and present low temperature process for the adoption of flexible devices.
Journal ArticleDOI
A review on the recent developments of solution processes for oxide thin film transistors
TL;DR: In this article, the authors introduce the recent advances in the development of oxide semiconductor materials based on solution processes and their potential applications, including flexible displays, biosensors, and non-volatile memory devices.
Journal ArticleDOI
Metal salt-derived In–Ga–Zn–O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors
Sunho Jeong,Ji Yoon Lee,Sun Sook Lee,Yeong Hui Seo,So Yun Kim,Jang Ung Park,Beyong Hwan Ryu,Woo Seok Yang,Jooho Moon,Young Min Choi +9 more
TL;DR: In this paper, the previously unrecognized co-solvent, formamide (FA), was used to improve both the device performance and bias stability of metal salt-derived, solution-processed In-Ga-Zn-O (IGZO) TFTs.
References
More filters
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
Akihiro Takagi,Kenji Nomura,Hiromichi Ohta,Hiromichi Ohta,Hiroshi Yanagi,Toshio Kamiya,Masahiro Hirano,Hideo Hosono +7 more
TL;DR: In this article, the authors investigated the carrier transport properties in amorphous oxide semiconductor InGaZnO 4 (a-IGZO) thin films using temperature dependence of Hall measurements and found that Hall mobility increased distinctly as carrier concentration increased.
Journal ArticleDOI
Stable, solution-processed, high-mobility ZnO thin-film transistors.
TL;DR: A stable, high-mobility ZnO thin-film semiconductor was fabricated by thermal treatment of a solution-deposited thin film from a solution of Zn(OAc)2/2-ethanolamine in methoxyethanol to demonstrate field-effect mobility and current on-to-off ratio.
Journal ArticleDOI
A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors
Journal ArticleDOI
Toward High-Performance Amorphous GIZO TFTs
TL;DR: In this paper, the role of processing parameters on the electrical performance of GIZO (Ga 2 O 3 :In 2O 3 :ZnO) films and thin-film transistors (TFTs) was analyzed.