Proceedings ArticleDOI
Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications
Shu Nakaharai,Tomohiko Iijima,S. Ogawa,Shingo Suzuki,Kazuhito Tsukagoshi,Shintaro Sato,Naoki Yokoyama +6 more
TLDR
In this article, a dual-gated transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV and an on-off ratio up to 103 at 200 K.Abstract:
We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 103 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.read more
Citations
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Journal ArticleDOI
Graphene Transistors: Status, Prospects, and Problems
TL;DR: The properties of graphene relevant for electronic applications are discussed, its advantages and problems are examined, and the state of the art of graphene transistors are summarized.
Journal ArticleDOI
The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems
TL;DR: The RFET basics and current status are reviewed and the state of the art of reconfigurable devices will be summarized and the RFET will be introduced together with related devices based on silicon nanowire technology.
Journal ArticleDOI
Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
Jens Trommer,Andre Heinzig,Uwe Mühle,Uwe Mühle,Markus Löffler,Annett Winzer,Paul M. Jordan,Jurgen Beister,Tim Baldauf,Marion Geidel,B. Adolphi,Ehrenfried Zschech,Thomas Mikolajick,Walter M. Weber +13 more
TL;DR: Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
Journal ArticleDOI
Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning
TL;DR: The Fermi-level pinning in the metal/α-MoTe2 Schottky junction is so weak that the polarity of the carriers injected from the junction can be controlled by the work function of the metals, in contrast to other transition metal dichalcogenides such as MoS2.
Journal ArticleDOI
Reconfigurable Nanowire Electronics-Enabling a Single CMOS Circuit Technology
TL;DR: In this article, the authors proposed a reconfigurable nanowire transistors, which fuse the electrical characteristics of unipolar n-and p-type field effect transistors (FETs) into a single universal type of four-terminal device.
References
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