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Proceedings ArticleDOI

Fast boolean logic mapped on memristor crossbar

TLDR
This paper proposes a novel design methodology for logic circuits targeting memristor crossbars that supports the execution of Boolean logic functions within constant number of steps independent of its functionality.
Abstract
As the CMOS technology is gradually scaling down to inherent physical device limits, significant challenges emerge related to scalability, leakage, reliability, etc. Alternative technologies are under research for next-generation VLSI circuits. Memristor is one of the promising candidates due to its scalability, practically zero leakage, non-volatility, etc. This paper proposes a novel design methodology for logic circuits targeting memristor crossbars. This methodology allows the optimization of the design of logic function, and their automatic mapping on the memristor crossbar. More important, this methodology supports the execution of Boolean logic functions within constant number of steps independent of its functionality. To illustrate the potential of the proposed methodology, multi-bit adders and multipliers are explored; their incurred delay, area and energy costs are analyzed. The comparison of our approach with state-of-the-art Boolean logic circuits for memristor crossbar architecture shows significant improvement in both delay (4 to 500 x) and energy consumption (1.22 to 3.71 x). The area overhead may decrease (down to 44%) or increase (up to 17%) depending on the circuit's functionality and logic optimization level.

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Citations
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Proceedings ArticleDOI

Memristor for computing: Myth or reality?

TL;DR: The paper shows not only the potential of memristor devices in enabling new memory technologies and new logic design styles, but also their potential in enabling memory intensive architectures as well as neuromorphic computing due to their unique properties such as the tight integration with CMOS and the ability to learn and adapt.
Journal ArticleDOI

Processing-in-memory: A workload-driven perspective

TL;DR: This article describes the work on systematically identifying opportunities for PIM in real applications and quantifies potential gains for popular emerging applications (e.g., machine learning, data analytics, genome analysis) and describes challenges that remain for the widespread adoption of PIM.
Proceedings ArticleDOI

Memristive logic: A framework for evaluation and comparison

TL;DR: This paper proposes metrics to compare memristive logic families using analytic expressions for performance, energy efficiency, and area, and provides guidelines for a holistic comparison of logic families and set the stage for the evolution of new logic families.
Proceedings ArticleDOI

SIMPLE MAGIC: synthesis and in-memory mapping of logic execution for memristor-aided logic

TL;DR: The development of SIMPLE is developed, a framework that optimizes the execution of an arbitrary logic function, while considering all the constraints involved in performing it within a memristive memory, to overcome the memory-CPU bottleneck.
Journal ArticleDOI

Optimized stateful material implication logic for three-dimensional data manipulation

TL;DR: Direct data manipulation in three dimensions enables extremely compact and high-throughput logicin- memory computing and, remarkably, presents a viable solution for the Feynman Grand Challenge of implementing an 8-bit adder at the nanoscale.
References
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Journal ArticleDOI

The missing memristor found

TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI

Memristor-The missing circuit element

TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI

Memristive devices for computing

TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Journal ArticleDOI

Metal–Oxide RRAM

TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
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