Proceedings ArticleDOI
Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al 2 O 3 dielectric
A. Ali,H. Madan,Alexander P. Kirk,Robert M. Wallace,Dalong Zhao,Devin A. Mourey,Mantu K. Hudait,Thomas N. Jackson,Brian R. Bennett,J.B. Boos,Suman Datta +10 more
- pp 27-30
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TLDR
In this article, the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al 2 O 3 dielectric.Abstract:
Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1–3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-к integration than In 0.2 Al 0.8 Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al 2 O 3 dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-к PEALD Al 2 O 3 dielectric using admittance spectroscopy and XPS analysis.read more
Citations
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Journal ArticleDOI
High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness
Michael Barth,G. Bruce Rayner,Stephen McDonnell,Robert M. Wallace,Brian R. Bennett,Roman Engel-Herbert,Suman Datta +6 more
TL;DR: In this article, in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GASb metal-oxide-semiconductor capacitors using a remote hydrogen plasma was investigated.
Journal ArticleDOI
Experimental Determination of Quantum and Centroid Capacitance in Arsenide–Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect
A. Ali,H. Madan,Rajiv Misra,Ashish Agrawal,Peter Schiffer,J.B. Boos,Brian R. Bennett,Suman Datta +7 more
TL;DR: In this paper, the experimental gate capacitance (Cg) versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFETs was analyzed using a physics-based analytical model to obtain the quantum capacitance.
Journal ArticleDOI
Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments
Uthayasankaran Peralagu,Ian M. Povey,Patrick B. Carolan,Jun Lin,R. Contreras-Guerrero,Ravi Droopad,Paul K. Hurley,Iain G. Thayne +7 more
TL;DR: In this paper, the impact of ammonium sulfide surface treatment on the electrical passivation of the Al2O3/p-GaSb interface is studied for varying sulfide concentrations.
Journal ArticleDOI
Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance
A. Ali,H. Madan,Ashish Agrawal,I. Ramirez,Rajiv Misra,J.B. Boos,Brian R. Bennett,Jeffrey Lindemuth,Suman Datta +8 more
TL;DR: In this article, enhancement-mode (e-mode) antimonide MOSFETs were demonstrated by integrating a composite high-κ gate stack (3 nm Al2O3 -1 nm GaSb) with an ultrathin InAs0.7Sb0.3 quantum well (7.5 nm).
Proceedings ArticleDOI
Analog circuit performance of high mobility ultrathin-body InAsSb-on-insulator MOSFETs
TL;DR: In this paper, the authors reported the first time, device parameters related to analog circuit applications of symmetric double-gate InAsSb channel n-MOSFETs.
References
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Journal ArticleDOI
The physics and technology of gallium antimonide: An emerging optoelectronic material
TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
Journal ArticleDOI
Fast PEALD ZnO Thin-Film Transistor Circuits
TL;DR: In this article, stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasmaenhanced atomic layer deposition (PEALD) process are reported.
Journal ArticleDOI
In-situ reflectance monitoring of GaSb substrate oxide desorption
TL;DR: The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported in this article, and a recommendation on a reproducible GSA substrate preparation technique suitable for high-quality epitaxial growth is suggested.
Journal ArticleDOI
Growth of InAsSb-channel high electron mobility transistor structures
TL;DR: In this paper, the molecular beam epitaxial growth of the random alloy InAsSb for use as the channel in high electron mobility transistors (HEMTs) was discussed.
Journal ArticleDOI
Electrical Analyses of Germanium MIS Structure and Spectroscopic Measurement of the Interface Trap Density in an Insulator/Germanium Interface at Room Temperature
TL;DR: In this paper, an equivalent circuit model of a germanium (Ge) MIS structure that is biased in the inversion region is presented, which includes the effects of the high intrinsic carrier density and high diffusion-limited conductance of the Ge substrate at room temperature.