Journal ArticleDOI
GaInNAs: a novel material for long-wavelength semiconductor lasers
Masahiko Kondow,Takeshi Kitatani,Shinichi Nakatsuka,M.C. Larson,Kouji Nakahara,Yoshiaki Yazawa,Makoto Okai,Kazuhisa Uomi +7 more
TLDR
In this paper, the authors used a gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source to grow a light-emitting material with a bandgap energy suitable for longwavelength laser diodes.Abstract:
GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.read more
Citations
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Journal ArticleDOI
Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application
L. V. Borkovska,O. Yefanov,O. Gudymenko,Shane Johnson,V. P. Kladko,N. Korsunska,Tetyana Kryshtab,Yu. G. Sadofyev,Yong-Hang Zhang +8 more
TL;DR: In this paper, the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature were investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods.
Journal ArticleDOI
Influence of growth temperature on carrier recombination in GaInNAs-based lasers
TL;DR: In this article, the authors considered the influence of the growth temperature on the contribution of the defect-related current to Jth in structures with nominally identical quantum wells and found that the strong increase in Jth with changing growth conditions can be explained almost entirely by an increase in the monomolecular recombination coefficient A, yielding a larger defectrelated current contribution.
Proceedings ArticleDOI
Recent Progress in Development of GaInNAs- Based Photonic Devices
TL;DR: In this article, the authors reviewed the recent advances made in the field of GaInNAs/GaAs semiconductor heterostructures for the fabrication of 1.3 µm METRO and LAN telecommunications lasers.
Journal ArticleDOI
Lattice‐mismatch‐strain effects on excitons in GaAs1–xNx /GaAs heterostructures
Jun Hashimoto,Masaaki Nakayama +1 more
TL;DR: In this article, the lattice-mismatch-strain effect on excitons in GaAs1-xNx (500 nm)/GaAs heterostructures with x = 0.4, 0.8, and 1.5% was investigated.
Proceedings ArticleDOI
Transparency current density of GaInNAs lasers
Greg Pakulski,James A. Gupta,Pedro Barrios,Andre Delage,Daniel Poitras,Xiaohua Wu,E. Post,Z. R. Wasilewski +7 more
TL;DR: In this paper, the authors studied the transparency current density (J tr ) in GaInNAs ridge waveguide lasers and showed that the transparency carrier density is sensitive to defects, traps and other sources of nonradiative recombination.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Book
Bonds and Bands in Semiconductors
TL;DR: This article has tried to show how this realm between physics and chemistry can be treated accurately and realistically within the framework of theory.
Journal ArticleDOI
Bonds and Bands in Semiconductors: New insight into covalent bonding in crystals has followed from studies of energy-band spectroscopy
TL;DR: The most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry as mentioned in this paper.
Journal ArticleDOI
Band gap energy and band lineup of III-V alloy semiconductors incorporating nitrogen and boron
TL;DR: In this article, the band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively.
Journal ArticleDOI
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.