Journal ArticleDOI
GaInNAs: a novel material for long-wavelength semiconductor lasers
Masahiko Kondow,Takeshi Kitatani,Shinichi Nakatsuka,M.C. Larson,Kouji Nakahara,Yoshiaki Yazawa,Makoto Okai,Kazuhisa Uomi +7 more
TLDR
In this paper, the authors used a gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source to grow a light-emitting material with a bandgap energy suitable for longwavelength laser diodes.Abstract:
GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.read more
Citations
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Journal ArticleDOI
High-performance long-wavelength (/spl lambda//spl sim/1.3 μm) InGaAsPN quantum-well lasers
TL;DR: In this article, high performance InGaAsPN quantum well-based long-wavelength laser grown on GaAs substrates, nitrogen containing lasers emitting in the /spl lambda/=12- to 13-/spl mu/m wavelength range were grown by gas source molecular beam epitaxy using a RF plasma nitrogen source under pulsed excitation.
Journal ArticleDOI
Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy
TL;DR: In this article, the behavior of the carrier concentration as a function of N content and doping concentration was examined, and a Fermi statistics model based on the experimental results has identified the energy levels and concentrations of three traps.
Journal ArticleDOI
Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
H. P. Yang,Chien-Rong Lu,R. S. Hsiao,Chih-Hung Chiou,Cheng Hung Lee,Chih-Fang Huang,Hsin-Chieh Yu,Chin May Wang,K. F. Lin,Nikolay A. Maleev,A. R. Kovsh,Chia-Pin Sung,Chun-Feng Lai,Jyh-Shyang Wang,Jenn-Fang Chen,Tsin-Dong Lee,Jim Y. Chi +16 more
TL;DR: In this paper, the InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3?m range were reported.
Journal ArticleDOI
Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN∕GaAs single quantum wells
Fang-I Lai,Shou-Yi Kuo,J. S. Wang,Hao-Chung Kuo,Shing-Chung Wang,H. S. Wang,Chi-Te Liang,Yang-Fang Chen +7 more
TL;DR: In this paper, a series of InGaAsN∕GaAs single-quantum wells (SQWs) with N contents varied from 0% to 5.3% were grown by molecular-beam epitaxy using a solid As and a nitrogen plasma sources.
Journal ArticleDOI
1.34 /spl mu/m GaInNAs quantum well lasers with low room-temperature threshold current density
TL;DR: In this article, the quaternary GaInNAs barrier layer was used to improve the performance of 13µm GaNAs single quantum well laser grown by MBE.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Book
Bonds and Bands in Semiconductors
TL;DR: This article has tried to show how this realm between physics and chemistry can be treated accurately and realistically within the framework of theory.
Journal ArticleDOI
Bonds and Bands in Semiconductors: New insight into covalent bonding in crystals has followed from studies of energy-band spectroscopy
TL;DR: The most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry as mentioned in this paper.
Journal ArticleDOI
Band gap energy and band lineup of III-V alloy semiconductors incorporating nitrogen and boron
TL;DR: In this article, the band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively.
Journal ArticleDOI
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.