Journal ArticleDOI
GaInNAs: a novel material for long-wavelength semiconductor lasers
Masahiko Kondow,Takeshi Kitatani,Shinichi Nakatsuka,M.C. Larson,Kouji Nakahara,Yoshiaki Yazawa,Makoto Okai,Kazuhisa Uomi +7 more
TLDR
In this paper, the authors used a gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source to grow a light-emitting material with a bandgap energy suitable for longwavelength laser diodes.Abstract:
GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.read more
Citations
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Proceedings ArticleDOI
A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE
Wonill Ha,Vincent Gambin,Seth R. Bank,Mark A. Wistey,Homan Yuen,Seongsin M. Kim,James S. Harris +6 more
TL;DR: In this article, the MBE growth of GaInAs(Sb)/GaAs quantum well-laser was investigated and it was shown that up to 50% incorporation was possible for samples above 15 /spl mu/m by introducing the optimum Sb flux and cracking temperature.
Journal ArticleDOI
Intersubband Transitions in Asymmetric Quantum Wells with External Electric Field
Zhao Xu Liu,Jun Zhu,Si Hua Ha +2 more
TL;DR: In this paper, the effect of the built-in and external electric fields on the optical absorption of intersubband transitions in an asymmetric AlxGa1-xN/In0.3Ga0.7N/GaN quantum well is investigated by means of the density matrix formulism.
Proceedings ArticleDOI
Bleaching relaxation in phosphate and silicate glasses doped with PbS quantum dots
Vasili G. Savitski,Alexander M. Malyarevich,M. S. Gaponenko,N. N. Posnov,Konstantin Yumashev,E. Raaben,A. A. Zhilin,Andrey A. Lipovskii +7 more
TL;DR: In this paper, the absorption spectra of PbS-doped glass samples are presented and the bleaching relaxation is measured using the pump-probe technique using the laser rangefinder.
Journal ArticleDOI
The application of gain theory to vertical-cavity surface-emitting lasers
TL;DR: In this paper, the authors describe a semiclassical approach based on the semiconductor Bloch equations, with carrier correlation effects described at the level of quantum kinetic theory, for long-wavelength VCSELs.
Journal ArticleDOI
Density Functional Theory Study of Quaternary InPBiN Alloys Lattice Matched to InP Substrate: Structural, Electronic and Optical properties
TL;DR: In this paper , the physical properties of the quaternary InBixP1−x-yNy alloys lattice matched to InP substrate were determined based on density functional theory.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
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TL;DR: This article has tried to show how this realm between physics and chemistry can be treated accurately and realistically within the framework of theory.
Journal ArticleDOI
Bonds and Bands in Semiconductors: New insight into covalent bonding in crystals has followed from studies of energy-band spectroscopy
TL;DR: The most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry as mentioned in this paper.
Journal ArticleDOI
Band gap energy and band lineup of III-V alloy semiconductors incorporating nitrogen and boron
TL;DR: In this article, the band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively.
Journal ArticleDOI
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.