Journal ArticleDOI
GaInNAs: a novel material for long-wavelength semiconductor lasers
Masahiko Kondow,Takeshi Kitatani,Shinichi Nakatsuka,M.C. Larson,Kouji Nakahara,Yoshiaki Yazawa,Makoto Okai,Kazuhisa Uomi +7 more
TLDR
In this paper, the authors used a gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source to grow a light-emitting material with a bandgap energy suitable for longwavelength laser diodes.Abstract:
GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.read more
Citations
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Journal ArticleDOI
Spectral Characteristics of Narrow-Linewidth High-Power 1180 nm DBR Laser With Surface Gratings
Heikki Virtanen,Antti T. Aho,Jukka Viheriälä,Ville-Markus Korpijärvi,Topi Uusitalo,Mervi Koskinen,Mihail Dumitrescu,Mircea Guina +7 more
TL;DR: In this article, the authors reported a narrow-linewidth 1180-nm GaInNAs/GaAs distributed Bragg reflector laser with high side-mode suppression ratio over a relatively large mode-hop-free tuning range.
Journal ArticleDOI
Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field
TL;DR: In this paper, the effect of indium and nitrogen mole concentrations on the nonlinear optical properties in a Ga1� xInxNyAs1� y=GaAs single quantum well under the intense laser field is theoretically studied within the effective mass approximation and the envelope function approach.
Journal ArticleDOI
Giant bowing of the band gap and spin-orbit splitting energy in GaP 1−x Bi x dilute bismide alloys
Zoe L. Bushell,Christopher A. Broderick,L. Nattermann,Rita Joseph,Joseph L. Keddie,Judy M Rorison,Kerstin Volz,Stephen J. Sweeney +7 more
TL;DR: A simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of EgΓ and ΔSO with x and provides insight into the action of Bi as an isovalent impurity.
Journal ArticleDOI
Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma
TL;DR: In this article, single quantum well laser diodes were grown on GaAs substrates using solid-source molecular beam epitaxy with N 2 /Ar gas mixtures in an radio-frequency (RF) plasma cell.
Journal ArticleDOI
Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy
TL;DR: In this paper, a simple method for measuring the ion flux from a molecular beam epitaxy (MBE) plasma cell in real-time was presented, which is applicable to GaN and related materials, but particularly important for growth of dilute nitrides.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Book
Bonds and Bands in Semiconductors
TL;DR: This article has tried to show how this realm between physics and chemistry can be treated accurately and realistically within the framework of theory.
Journal ArticleDOI
Bonds and Bands in Semiconductors: New insight into covalent bonding in crystals has followed from studies of energy-band spectroscopy
TL;DR: The most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry as mentioned in this paper.
Journal ArticleDOI
Band gap energy and band lineup of III-V alloy semiconductors incorporating nitrogen and boron
TL;DR: In this article, the band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively.
Journal ArticleDOI
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.