Journal ArticleDOI
GaInNAs: a novel material for long-wavelength semiconductor lasers
Masahiko Kondow,Takeshi Kitatani,Shinichi Nakatsuka,M.C. Larson,Kouji Nakahara,Yoshiaki Yazawa,Makoto Okai,Kazuhisa Uomi +7 more
TLDR
In this paper, the authors used a gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source to grow a light-emitting material with a bandgap energy suitable for longwavelength laser diodes.Abstract:
GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.read more
Citations
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Journal ArticleDOI
10 Gbit/s modulation of 1.3 [micro sign]m GaInNAs lasers up to 110°C
Abstract: Uncooled 10 Gbit/s operation of high-T0 ridge waveguide 13 µm GaInNAs lasers at ambient temperatures as high as 110°C is demonstrated The low temperature sensitivity enables use of a constant modulation voltage to obtain clear open eyes with an extinction ratio exceeding 5 dB
Journal ArticleDOI
Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
TL;DR: In this article, the structural properties of Ga1−xInxNyAs1−y (GINA) quantum wells are investigated in terms of interface roughness and chemical composition variations by using conventional and high-resolution transmission electron microscopy (HRTEM).
Journal ArticleDOI
Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range
Yongqiang Wei,Johan S. Gustavsson,Mahdad Sadeghi,Shumin Wang,Anders Larsson,Pekka Savolainen,P. Melanen,Pekko Sipilä +7 more
TL;DR: Ridge waveguide 1.3 mum GaInNAs lasers were fabricated from high quality double quantum well material grown by molecular beam epitaxy, and an extinction ratio larger than 6 dB and a spectral rms-width smaller than 2 nm are obtained.
Journal ArticleDOI
InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
TL;DR: In this paper, the growth of the antimony-rich dilute nitride alloys GaSbN, InGaSbNs, and InGaAsSsbN was investigated by solid-source molecular-beam epitaxy and a nitrogen-induced redshift of the photoluminescence peak wavelength as large as 110 meV was observed in In.15Ga.
Journal ArticleDOI
Optimization of an optically pumped 1.3-μm GaInNAs vertical-cavity surface-emitting laser
TL;DR: In this paper, numerical model predictions are used to optimize the design of an 980-nm-pumped 1.3/spl mu/m GaInNAs vertical-cavity surface-emitting laser.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Book
Bonds and Bands in Semiconductors
TL;DR: This article has tried to show how this realm between physics and chemistry can be treated accurately and realistically within the framework of theory.
Journal ArticleDOI
Bonds and Bands in Semiconductors: New insight into covalent bonding in crystals has followed from studies of energy-band spectroscopy
TL;DR: The most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry as mentioned in this paper.
Journal ArticleDOI
Band gap energy and band lineup of III-V alloy semiconductors incorporating nitrogen and boron
TL;DR: In this article, the band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively.
Journal ArticleDOI
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.