Journal ArticleDOI
GaInNAs: a novel material for long-wavelength semiconductor lasers
Masahiko Kondow,Takeshi Kitatani,Shinichi Nakatsuka,M.C. Larson,Kouji Nakahara,Yoshiaki Yazawa,Makoto Okai,Kazuhisa Uomi +7 more
TLDR
In this paper, the authors used a gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source to grow a light-emitting material with a bandgap energy suitable for longwavelength laser diodes.Abstract:
GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.read more
Citations
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Journal ArticleDOI
Effects of oxygen variation on the improved structural stability, electronic and optical properties of ZnTeO compounds.
TL;DR: Structural, electronic and optical properties of ZnTeO composites have been thoroughly studied using genetic algorithm and density functional theory and it is observed that Zn-d, Te-p and O-p states have immense influence towards the electronic properties of these structures.
Journal ArticleDOI
Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
A. Yu. Egorov,V.A. Odnobludov,V. V. Mamutin,A. E. Zhukov,A. F. Tsatsul’nikov,N. V. Kryzhanovskaya,V. M. Ustinov,Y.G. Hong,Charles W. Tu +8 more
TL;DR: In this article, the fundamental properties of GaAsN compounds and GaAs/GaAsN/InGaAs heterostructures grown by MBE were investigated and the strain-induced splitting of light-hole and heavy-hole bands of tensilly strained GaAsNs was observed.
Journal ArticleDOI
1.3 μm emitting GaInNAs/GaAs quantum well resonant cavity LEDs
TL;DR: In this paper, the electrical and optical characteristics of a set of MBE-grown 1.3-μm emitting GaInNAs/GaAs resonant cavity light-emitting diodes (RCLEDs) have been analyzed as a function of the growth temperature of the distributed Bragg reflector (DBR) and the contact alloying.
Journal ArticleDOI
Infrared absorption due to local vibrational modes of nitrogen in GaAs:N and GaAs-based dilute nitrides
TL;DR: In this article, the authors reviewed recent experimental progress in the investigation of nitrogen in GaAs and GaAs-based dilute nitrides by Fourier transform infrared absorption spectroscopy.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Book
Bonds and Bands in Semiconductors
TL;DR: This article has tried to show how this realm between physics and chemistry can be treated accurately and realistically within the framework of theory.
Journal ArticleDOI
Bonds and Bands in Semiconductors: New insight into covalent bonding in crystals has followed from studies of energy-band spectroscopy
TL;DR: The most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry as mentioned in this paper.
Journal ArticleDOI
Band gap energy and band lineup of III-V alloy semiconductors incorporating nitrogen and boron
TL;DR: In this article, the band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively.
Journal ArticleDOI
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.