Proceedings ArticleDOI
GaN Silicon-on-Insulator (SOI) N-Channel FinFET for High-Performance Low Power Applications
TLDR
In this paper, a novel GaN (Gallium Nitride) SOI (Silicon-on-Insulator) FinFET (GaN-SOI Fin-FET) was proposed using TCAD.Abstract:
A novel GaN (Gallium Nitride) SOI (Silicon-on-Insulator) FinFET (GaN-SOI FinFET) is proposed in this work using TCAD. All the results of the proposed device with 8 nm gate length are compared with bulk GaN FinFET and conventional silicon FinFET. At ultra-low voltage (V DS = 0.1 V) power supply, GaN-SOI FinFET device enhances (by four times) ON-current (I ON ) thereby subthreshold slope, transconductance, surface potential, and switching performance of the device. Thus, the enhanced electrical performance of GaN-SOI FinFET improves the device efficiency and makes it suitable candidate for highperformance CMOS circuits with ultra-low power.read more
Citations
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Book ChapterDOI
Concentration-Dependent Assessment of GaAs Junctionless FinFET (JLFinFET) with High-k Spacer
TL;DR: In this article , the doping concentration assessment of gallium arsenide (GaAs)-based junctionless FinFET (JLFinFET) with silicon nitride (Si3N4) as a high-k spacer is presented.
References
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Journal ArticleDOI
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
TL;DR: Examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing are described.
Proceedings ArticleDOI
Sub-20 nm CMOS FinFET technologies
Yang-Kyu Choi,Nick Lindert,Peiqi Xuan,S. Tang,Daewon Ha,E. Anderson,T.-J. King,Jeffrey Bokor,Chenming Hu +8 more
TL;DR: In this paper, a simplified fabrication process for sub-20 nm CMOS double-gate FinFETs is reported, which is a more manufacturable process and has less overlap capacitance.
Journal ArticleDOI
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz
Yan Tang,Keisuke Shinohara,D. Regan,Andrea Corrion,David F. Brown,Joel Wong,Adele E. Schmitz,Helen Fung,Samuel Kim,Miroslav Micovic +9 more
TL;DR: In this article, the authors reported record RF performance of deeply scaled depletionmode GaN-high-electron-mobility transistors (GaN-HEMTs) based on double heterojunction AlN/GaN/AlGaN epitaxial structure, fully passivated devices were fabricated by self-aligned-gate technology featuring recessed $n+}$ -GaN ohmic contact regrown by molecular beam epitaxy.
Book ChapterDOI
Junctionless Transistors: Physics and Properties
Jean-Pierre Colinge,Christopher W. Lee,N. Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Pedram Razavi,Abhinav Kranti,Ran Yu +7 more
TL;DR: In this paper, the conduction mechanisms in three types of MOS devices: inversion-mode, accumulation-mode and junctionless MOSFETs are compared, and it is shown that junctionless transistors have different conduction properties from those of normal MOSFs.
Journal ArticleDOI
High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure
Ki-Sik Im,Chul-Ho Won,Young-Woo Jo,Jae-Hoon Lee,Maryline Bawedin,Sorin Cristoloveanu,Jung-Hee Lee +6 more
TL;DR: In this article, two types of fin-shaped field effect transistors (FinFETs), one with AlGaN/GaN heterojunction and the other with heavily doped heter-junction-free GaN layer operating in junctionless mode, have been fabricated and characterized.
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