Journal ArticleDOI
High-speed light Modulation in avalanche breakdown mode for Si diodes
TLDR
In this paper, the limiting speed of light emission from a p-n junction in the forward bias region is determined by the transit time of the minority carriers across the junction during the filament formation of breakdown currents, which is demonstrated by simulation of the propagation of a shockwave-like pattern in the breakdown field.Abstract:
The light emission process from a p-n junction in the forward-bias region is slow to respond to modulation signals due to the indirect band structure of silicon Experimental results for a reverse-bias region showing light modulation in the range of tens of gigahertz are observed for the first time For such a light emitter, the limiting speed of light modulation is shown to be determined by the transit time of the minority carriers across the junction during the filament formation of breakdown currents, which has been demonstrated by simulation of the propagation of a shockwave-like pattern in the breakdown fieldread more
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Detection of tooth decay: Report of a novel invention
TL;DR: A novel invention for early diagnosis of tooth decay without any chemicals and rays such as lasers or X-rays is introduced and can be used as the primary method of dental caries.
References
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Journal ArticleDOI
Limits on Silicon Nanoelectronics for Terascale Integration
TL;DR: Analysis of fundamental, material, device, circuit, and system limits reveals that silicon technology has an enormous remaining potential to achieve terascale integration (TSI) of more than 1 trillion transistors per chip.
Journal ArticleDOI
On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices
TL;DR: In this article, a photon emission efficiency of 2.9*10/sup 5/ photons with energy higher than 1.14 eV per carrier crossing the junction, independent of the lattice temperature down to 20 K, was measured.
Journal ArticleDOI
Observation of avalanche propagation by multiplication assisted diffusion in p-n junctions
TL;DR: In this article, the propagation of the avalanche multiplication over the area of p−n junctions reverse biased above the breakdown voltage was investigated, and it was shown that diffusion of carriers assisted by avalanche multiplication strongly affects the rise of avalanche current and turns out to limit the performance of single photon avalanche diodes.
Journal ArticleDOI
Photon‐assisted avalanche spreading in reach‐through photodiodes
TL;DR: In this paper, the authors investigated the spreading of the avalanche process over the area of reach-through avalanche photodiodes operated in Geiger mode and found that photons emitted from hot carrier relaxations played the dominant role in the avalanche dynamics.
Journal ArticleDOI
Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems
TL;DR: In this paper, a variety of two terminal and multiterminal integrated silicon light-emitting devices (Si-LEDs) can be routinely fabricated without any adaptation to the process, enabling the production of all-silicon monolithic optoelectronic systems.