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Open AccessJournal ArticleDOI

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

TLDR
This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.
Abstract
We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.

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Citations
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Journal ArticleDOI

High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s −1 and beyond

TL;DR: In this paper, the authors demonstrate a Mach-Zehnder modulator with high linearity, high bandwidth, and low manufacturing cost on a silicon and lithium niobate hybrid integration platform.
Journal ArticleDOI

High-Performance Hybrid Silicon and Lithium Niobate Mach-Zehnder Modulators for 100 Gbit/s and Beyond

TL;DR: In this article, a Mach-Zehnder modulator with high-contrast waveguide based on a Silicon and Lithium Niobate hybrid integration platform has been demonstrated for high-speed, energy efficient and cost-effective optical communication networks.
Journal ArticleDOI

Integrated photonics on thin-film lithium niobate

TL;DR: In this article, the authors present a review of the state-of-the-art integrated thin-film LNOI photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optic.
Journal ArticleDOI

High-performance coherent optical modulators based on thin-film lithium niobate platform

TL;DR: In this article, LiNiobate-on-insulator based in-phase/quadrature (IQ) electro-optic modulators are proposed for coherent transmission.
Journal ArticleDOI

Self-starting bi-chromatic LiNbO 3 soliton microcomb

TL;DR: In this article, a soliton microcomb was demonstrated in a monolithic high-Q LN resonator, where the LN soliton mode-locking process self-starts and allows bi-directional switching of soliton states.
References
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Book

Microwave Engineering

David M Pozar
Journal ArticleDOI

A review of lithium niobate modulators for fiber-optic communications systems

TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI

Losses in single-mode silicon-on-insulator strip waveguides and bends.

TL;DR: The fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers with record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.
Journal ArticleDOI

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

TL;DR: In this paper, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE) to study the mechanisms of TED.
Journal ArticleDOI

Electro–optically tunable microring resonators in lithium niobate

TL;DR: In this paper, the first realization of optical microring resonators in submicrometre thin films of lithium niobate was reported, where high-index contrast films were produced by an improved crystal-ion-slicing and bonding technique using benzocyclobutene.
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