Journal ArticleDOI
Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
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TLDR
In this article, it was shown that MOSFET degradation is due to interface states generation by electrons having 3.7 eV and higher energies, and this critical energy and the observed time dependence was explained with a physical model involving the breaking of the = Si/sub s/H bonds.Abstract:
Evidence suggests that MOSFET degradation is due to interface-states generation by electrons having 3.7 eV and higher energies. This critical energy and the observed time dependence is explained with a physical model involving the breaking of the = Si/sub s/H bonds. The device lifetime /spl tau/ is proportional to...read more
Citations
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Journal ArticleDOI
Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review
TL;DR: In this paper, the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed high-performing ULSI applications is examined.
Journal ArticleDOI
PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation
G. Gildenblat,Xin Li,W. Wu,H. Wang,Amit Jha,R. van Langevelde,G.D.J. Smit,A.J. Scholten,D.B.M. Klaassen +8 more
TL;DR: In this paper, the authors describe the latest and most advanced surface potential-based model jointly developed by The Pennsylvania State University and Philips, which includes model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources.
Journal ArticleDOI
Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology
TL;DR: A unified approach that directly predicts the change of key transistor parameters under various process and design conditions for both NBTI and CHC effects is presented, and it is demonstrated that the proposed method very well predicts the degradation.
Journal ArticleDOI
Berkeley reliability tools-BERT
TL;DR: Berkeley reliability tools (BERT) simulates the circuit degradation (drift) due to hot-electron degradation in MOSFETs and bipolar transistors and predicts circuit failure rates due to oxide breakdown and electromigration in CMOS, bipolar, and BiCMOS circuits.
Journal ArticleDOI
On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress
TL;DR: In this paper, a common framework for interface-trap (NIT) generation involving broken equivSi-H and equiv Si-O bonds is developed for negative bias temperature instability (NBTI), Fowler-Nordheim (FN), and hot-carrier injection (HCI) stress.
References
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Journal ArticleDOI
Problems related to p-n junctions in silicon
TL;DR: In this article, a simplified model of secondary ionization, avalanche breakdown and microplasma phenomena in p-n junctions was proposed, in which holes and electrons have identical properties described by four constants: generation of highest energy or Raman phonons, energy E R and mean-free-path L R ; ionization or electron-hole pair production, threshold carrier energy E i and mean free path L i.
Journal ArticleDOI
Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
Kjell Jeppson,Christer Svensson +1 more
TL;DR: A detailed study of the increase of the number of surface traps in MOS structures after NBS at temperatures (25-125°C) and fields (400-700 MV/m) comparable to those used in MNOS devices is presented in this article.
Journal ArticleDOI
An empirical model for device degradation due to hot-carrier injection
E. Takeda,N. Suzuki +1 more
TL;DR: In this article, an empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented, and the relationship between device degradation, drain voltage, and substrate current is clarified on the basis of experiments and modeling.
Journal ArticleDOI
Photon Emission from Avalanche Breakdown in Silicon
A. G. Chynoweth,K. G. McKay +1 more
TL;DR: In this article, it was shown that the number of light spots increases with the current rather than individual spots growing brighter, and that all the breakdown current is carried through the junction by these localized light-emitting spots.
Journal ArticleDOI
Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
TL;DR: In this article, a series of experiments designed to characterize the charging effect of thermal SiO2 films with water was conducted. And they found that if water is diffused into a SiO 2 film, water related centers are formed which act like electron traps with capture cross section of approximately 1.5 × 10−17 cm2.
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