Journal ArticleDOI
Influence of electron beam and ultraviolet irradiations on graphene field effect transistors
TLDR
In this article, a comparative study of electron-beam and ultraviolet (UV) irradiated graphene field effect transistors (FETs) for different doses and exposure times was performed.About:
This article is published in Optical Materials.The article was published on 2017-10-01. It has received 7 citations till now. The article focuses on the topics: Graphene & Field-effect transistor.read more
Citations
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Journal ArticleDOI
Ambipolar remote graphene doping by low-energy electron beam irradiation
Veronika Stará,Veronika Stará,Pavel Procházka,Pavel Procházka,David Mareček,Tomáš Šikola,Tomáš Šikola,Jan Čechal,Jan Čechal +8 more
TL;DR: Low-energy electron beam irradiation is employed to induce both n- and p-doping in a graphene layer and by setting an appropriate irradiation protocol, any desired doping levels can be achieved.
Journal ArticleDOI
Effect of an optimal oxide layer on the efficiency of graphene-silicon Schottky junction solar cell
Journal ArticleDOI
NO2 Gas Sensor Using Iodine Doped Graphene at Room Temperature With Electric Field Enhanced Recovery
TL;DR: In this article , a novel carbon-based material was synthesized by chemical doping of Iodine (I2) into multilayer graphene (MLG) using photolysis method.
Journal ArticleDOI
Electron Transport Properties of WS 2 Field-Effect Transistors Modulated by Electron Beam Irradiation Under Gate Voltage
Jieyuan Liang,Lijie Zhang,Xiaoxiao Li,Baojun Pan,Luo Tingyan,Nannan Liu,Chao Zou,Yun Yang,Shaoming Huang +8 more
TL;DR: In this paper, the influence of e-beam irradiation on electron transport properties of monolayer WS2 field effect transistors was investigated by applying a gate voltage ( ${V} _{{\text {gs}}}$ ) during irradiation.
Journal ArticleDOI
Electron-beam chemistry in graphene - Effect of environmental SEM parameters on patterning and defect engineering
Ryan Selhorst,Michael A. Susner,Ryan Muzzio,I. H. Kao,Jennifer Carpena-Núñez,Ahmad E. Islam,Jyoti Katoch,Benji Maruyama,Rahul Rao +8 more
TL;DR: In this paper , the relationship between instrumental parameters and structural changes in graphene is investigated by Raman spectroscopy, and it is shown that electron dose is the dominant parameter that shows the most intense levels of structural modulation.
References
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Journal ArticleDOI
Ultrafast graphene photodetector
TL;DR: This work demonstrates ultrafast transistor-based photodetectors made from single- and few-layer graphene that do not degrade for optical intensity modulations up to 40 GHz and suggests that the intrinsic bandwidth may exceed 500 GHz.
Journal ArticleDOI
Graphene-based liquid crystal device.
Peter Blake,P. D. Brimicombe,Rahul R. Nair,Timothy J. Booth,Da Jiang,Fred Schedin,Leonid Ponomarenko,Sergey V. Morozov,Helen F. Gleeson,Ernie W. Hill,Andre K. Geim,Kostya S. Novoselov +11 more
TL;DR: This letter demonstrates liquid crystal devices with electrodes made of graphene that show excellent performance with a high contrast ratio and discusses the advantages of graphene compared to conventionally used metal oxides in terms of low resistivity, high transparency and chemical stability.
Journal ArticleDOI
Chemical doping of graphene
Hongtao Liu,Yunqi Liu,Daoben Zhu +2 more
TL;DR: In this paper, a summary of chemical doping of graphene aimed at tuning the electronic properties of graphene is presented, which will be beneficial to designing high performance electronic devices based on chemically doped graphene.
Journal ArticleDOI
Charged-impurity scattering in graphene
Jian-Hao Chen,Chaun Jang,Shaffique Adam,Michael S. Fuhrer,Ellen D. Williams,Masa Ishigami,Masa Ishigami +6 more
TL;DR: In this paper, a systematic study of the influence of scattering from impurities on the peculiar electronic properties of graphene is conducted by monitoring changes in electronic characteristics of initially clean graphene, by depositing potassium atoms onto its surface in ultrahigh vacuum.