Journal ArticleDOI
Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: a key chemical technology for advanced device applications
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TLDR
A review of metal organic vapour phase epitaxy (MOVPE) processes developed for the group 13 nitrides AlN, GaN, InN and their alloys can be found in this article.About:
This article is published in Coordination Chemistry Reviews.The article was published on 2013-07-31. It has received 68 citations till now. The article focuses on the topics: Gallium nitride & Nitride.read more
Citations
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Light-emitting diodes
TL;DR: Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
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Crystal facet engineering of photoelectrodes for photoelectrochemical water splitting
TL;DR: This article summarizes the major challenges and some invigorating perspectives for future research on crystal facet engineered photoelectrodes, which are believed to play a vital role in promoting the development of this important research field.
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A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications
Sujan Rajbhandari,Sujan Rajbhandari,Jonathan J. D. McKendry,Johannes Herrnsdorf,Hyunchae Chun,Grahame Faulkner,Harald Haas,Ian Watson,Dominic O'Brien,Martin D. Dawson +9 more
TL;DR: The state-of-the-art technology enabling bandwidth of GaN LEDs in the range of >400 MHz is explored and advances in key technologies, including advanced modulation, equalisation, and multiplexing that have enabled free-space VLC data rates beyond 10 Gb/s are outlined.
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Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs
TL;DR: In this paper, the authors present a review of the state-of-the-art GaN micro-and nanodevices beyond lighting, including an up-to-date overview on the state of the art.
References
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Chemistry of the elements
TL;DR: In this article, the origins of the elements, isotopes and atomic weights Chemical periodicity and the periodic table were discussed, including the following elements: Hydrogen Lithium, sodium, potassium, rubidium, caesium and francium Beryllium, magnesium, calcium, strontium, barium and radium Boron Aluminium, gallium, indium and thallium Carbon Silicon Germanium, tin and lead Nitrogen Phosphorus Arsenic, antimony and bismuth Oxygen Sulfur Selenium, tellurium
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Optical Properties of Solids
TL;DR: In this article, the authors propose a quantum theory of radiative absorption and emission in dielectric dielectrics, based on the classical propagation and interband absorption, respectively.
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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
Michael R. Krames,O.B. Shchekin,Regina B. Mueller-Mach,Gerd O. Mueller,Ling Zhou,Gerard Harbers,M. G. Craford +6 more
TL;DR: In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.