Journal ArticleDOI
Modeling for bipolar resistive memory switching in transition-metal oxides
Reads0
Chats0
TLDR
In this paper, a model which describes the bipolar resistive switching in transition-metal oxides is presented, which simultaneously predicts three key features of experimental measurements: the rectifying behavior in high resistance states, abrupt switching, and the existence of bistable resistance states.Abstract:
A model which describes the bipolar resistive switching in transition-metal oxides is presented. To simulate the effect of switching, we modeled results of doping by oxygen vacancies along with variable Schottky barrier and resistor. The model simultaneously predicts three key features of experimental measurements: the rectifying behavior in high resistance states, abrupt switching, and the existence of bistable resistance states. Our model is based on modulation of Schottky barrier formed by variable resistance oxide layer at the metal-oxide interface. Experimental measurements of the $\text{Pt}/{\text{Ta}}_{2}{\text{O}}_{5}/{\text{TaO}}_{x}/\text{Pt}$ structure matched very well with our nonvolatile resistive switching model.read more
Citations
More filters
Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
TL;DR: A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.
Journal ArticleDOI
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
TL;DR: TiO(2) and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with and appear to offer a basis for the understanding of other RS mechanisms which were originally considered to be irrelevant to the localized events.
Journal ArticleDOI
STDP and STDP variations with memristors for spiking neuromorphic learning systems.
Teresa Serrano-Gotarredona,Timothée Masquelier,Themistoklis Prodromakis,Giacomo Indiveri,Bernabe Linares-Barranco +4 more
TL;DR: This paper reviews several ways of realizing asynchronous Spike-Timing-Dependent-Plasticity (STDP) using memristor as synapses, and shows how to implement these rules in cross-bar architectures that comprise massive arrays of memristors.
Journal ArticleDOI
Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.
Feng Miao,John Paul Strachan,Jianhua Yang,M.-X. Zhang,Ilan Goldfarb,Antonio C. Torrezan,Peter Eschbach,Ronald D. Kelley,Gilberto Medeiros-Ribeiro,R. Stanley Williams +9 more
TL;DR: Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism in a resistive random access memory device.