Journal ArticleDOI
Modeling of output snapback characteristics in n-channel SOI MOSFETs
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TLDR
In this paper, an analytical model was developed for predicting the observed output characteristics taking into account both the bipolar and the MOS mechanisms, and it was shown that, with continuing scaling of device geometries and improvement in SOI materials, the bipolar-induced snapback will become dominant in the future.Abstract:
The snapback effect is usually observed in the output characteristics of an n-channel SOI MOSFET with zero gate voltage in which the drain-to-source breakdown voltage is less than the drain-to-body avalanche voltage. It can be attributed to parasitic lateral bipolar actions as well as the MOS feedback mode of operation-a point often overlooked in the literature. An analytical model is developed for predicting the observed output characteristics taking into account both the bipolar and the MOS mechanisms. Results obtained from this model agree well with the experimental I-V curves, and show that, with continuing scaling of device geometries and improvement in SOI materials, the bipolar-induced snapback will become dominant in the future. >read more
Citations
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References
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A simple method to characterize substrate current in MOSFET's
T.Y. Chan,P.K. Ko,Chenming Hu +2 more
TL;DR: In this article, a simple relationship between substrate current and V DS - V DSAT is found, which provides a convenient tool to characterize the substrate current or the channel electric field, and hence, hence, all hot-electron effects.
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TL;DR: In this paper, a single-transistor latch phenomenon observed in silicon-on-insulator (SOI) MOSFETs is reported, which occurs at high drain biases.
Journal ArticleDOI
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T.Y. Chan,P.K. Ko,Chenming Hu +2 more
TL;DR: In this article, the authors investigated the dependence of the maximum channel electric field on device geometries and process parameters, and found that E m has a form of (V{DS} - V_{DSAT})/ 0.22T
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