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Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

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TLDR
In this paper, an angle-resolved photo-emission spectroscopy study was conducted to reveal the first observation of a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi-2Se-3 class of materials.
Abstract
Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks. It has been proposed that a topological insulator with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi_2Se_3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi_2Se_3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

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Angle-resolved photoemission spectroscopy and its application to topological materials

TL;DR: Recently, Angle-Resolved photoemission spectroscopy (ARPES) has emerged as an indispensable experimental probe in the study of topological materials, which have characteristic non-trivial bulk and surface electronic structures that can be directly detected by ARPES as mentioned in this paper.
Journal ArticleDOI

Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization

TL;DR: In this paper, a coherent understanding of the current generation of topological insulators (TIs) is provided, and it is shown that band-bending effects contribute significantly to the TI transport properties including Shubnikov de-Haas oscillations, and that utilization of this band bending effect can lead to a Mott insulating bulk state in the thin regime.
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Topological insulator bismuth selenide as a theranostic platform for simultaneous cancer imaging and therapy

TL;DR: It is shown that Bi2Se3 nanoplates can absorb near-infrared (NIR) laser light and effectively convert laser energy into heat and photothermal conversion property may be due to the unique physical properties of topological insulators.
Journal ArticleDOI

Stacked topological insulator built from bismuth-based graphene sheet analogues

TL;DR: In this article, the authors synthesize the first bulk material belonging to an entirely different, weak, topological class, built from stacks of two-dimensional topological insulators: Bi14Rh3I9.
Journal ArticleDOI

Disordered topological insulators: a non-commutative geometry perspective

TL;DR: In this paper, a review of the topological properties of strongly disordered topological insulators is presented, where the analytic theory of the Chern number is used to define topological invariants in the presence of strong disorder.
References
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Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator

TL;DR: It is shown that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.
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