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Open AccessJournal ArticleDOI

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

TLDR
In this paper, an angle-resolved photo-emission spectroscopy study was conducted to reveal the first observation of a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi-2Se-3 class of materials.
Abstract
Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks. It has been proposed that a topological insulator with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi_2Se_3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi_2Se_3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

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Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti‐Site Defects

TL;DR: First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
Journal ArticleDOI

Two-dimensional transport-induced linear magneto-resistance in topological insulator Bi2Se3 nanoribbons.

TL;DR: In this article, a linear magneto-resistance (MR) under perpendicular magnetic fields in Bi(2)Se(3) nanoribbons was shown to persist to room temperature.
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Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

TL;DR: It is shown that the linear MR of Bi(2)Se(3) nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room-temperature magneto-electronic applications.
Journal ArticleDOI

A search model for topological insulators with high-throughput robustness descriptors

TL;DR: By defining a reliable and accessible descriptor, which represents the topological robustness or feasibility of the candidate, and by searching the quantum materials repository aflowlib.org, 28 TIs are automatically discovered, including peculiar ternary halides, Cs{Sn,Pb,Ge}{Cl,Br,I}(3), which could have been hardly anticipated without high-throughput means.
Journal ArticleDOI

Micro-Raman Spectroscopy of Mechanically Exfoliated Few-Quintuple Layers of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3) Materials

TL;DR: In this article, the micro-Raman spectroscopy study of the "graphene-like" exfoliated few-quintuple layers of Bi(2)Te(3), Bi(1)Se(3) and Sb( 2)Te (3) was carried out on mica, sapphire and hafnium-oxide substrates.
References
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Journal ArticleDOI

Generalized Gradient Approximation Made Simple

TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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The rise of graphene

TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Quantum Spin Hall Insulator State in HgTe Quantum Wells

TL;DR: The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect.
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Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator

TL;DR: It is shown that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.
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