Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Yuqi Xia,Dong Qian,Dong Qian,David Hsieh,Lewis Wray,Arijeet Pal,Hsin Lin,Arun Bansil,D. Grauer,Yew San Hor,Robert J. Cava,M. Z. Hasan +11 more
TLDR
In this paper, an angle-resolved photo-emission spectroscopy study was conducted to reveal the first observation of a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi-2Se-3 class of materials.Abstract:
Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks. It has been proposed that a topological insulator with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi_2Se_3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi_2Se_3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.read more
Citations
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Thickness-dependent bulk electronic properties in Bi 2 Se 3 thin films revealed by infrared spectroscopy
TL;DR: In this paper, the electronic structure of epitaxial thin films with thickness between 15 and 99 quintuple layers (QL) on a Si substrate using a combination of variable angle spectroscopic ellipsometry and infrared transmission spectroscopy was investigated.
Book ChapterDOI
Topological Insulators, Topological Dirac semimetals, Topological Crystalline Insulators, and Topological Kondo Insulators
Journal ArticleDOI
Probing the wavefunction of the surface states in Bi2Se3 topological insulator: a realistic tight-binding approach
Anna Pertsova,Carlo M. Canali +1 more
TL;DR: In this article, microscopic tight-binding modeling of surfacestates in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a\textit{sp}$^3$ Slater-Koster Hamiltonian, with parameters calcul...
Journal ArticleDOI
Nonlinear terahertz emission in the three-dimensional topological insulator Bi2Te3 by terahertz emission spectroscopy
Zhaoji Fang,Hangtian Wang,Xiaojun Wu,Shengyu Shan,Chun Wang,Haihui Zhao,Chenyi Xia,Tianxiao Nie,Jungang Miao,Chao Zhang,Weisheng Zhao,Li Wang +11 more
TL;DR: In this article, the authors systematically investigated the ultrafast transient terahertz emission excited by femtosecond laser pulses in Bi2Te3 with teraspectral spectroscopy serving as an ultrafast and contactless detector.
Journal ArticleDOI
Layered Manganese Bismuth Tellurides with GeBi4Te7– and GeBi6Te10–type Structures: Towards Multifunctional Materials
Daniel Souchay,Markus Nentwig,Daniel Günther,Simon Keilholz,Johannes de Boor,Alexander Zeugner,Anna Isaeva,Michael Ruck,Anja U. B. Wolter,Bernd Büchner,Bernd Büchner,Oliver Oeckler +11 more
TL;DR: In this paper, the crystal structures of new layered manganese bismuth tellurides with the compositions Mn0.85(3)Bi4.10Te7 and 2.73(4)Bi6.13Te10 were determined by single-crystal X-ray diffraction, including the use of microfocused synchrotron radiation.
References
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