Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Yuqi Xia,Dong Qian,Dong Qian,David Hsieh,Lewis Wray,Arijeet Pal,Hsin Lin,Arun Bansil,D. Grauer,Yew San Hor,Robert J. Cava,M. Z. Hasan +11 more
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TLDR
In this paper, an angle-resolved photo-emission spectroscopy study was conducted to reveal the first observation of a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi-2Se-3 class of materials.Abstract:
Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks. It has been proposed that a topological insulator with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi_2Se_3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi_2Se_3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.read more
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Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2
Nasser Alidoust,Guang Bian,Su-Yang Xu,Raman Sankar,Madhab Neupane,Chang Liu,Ilya Belopolski,Dong-Xia Qu,Jonathan D. Denlinger,Fangcheng Chou,M. Zahid Hasan +10 more
TL;DR: This work reports high-resolution angle-resolved photoemission spectroscopy on MoSe2 single crystals and monolayer films of MoS2 grown on highly ordered pyrolytic graphite substrate, and systematically image the formation of quantum well states on the surfaces of these materials.
Journal ArticleDOI
Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
Anthony Richardella,Duming Zhang,Joon Sue Lee,A. Koser,D. W. Rench,Andrew L. Yeats,Bob B. Buckley,David D. Awschalom,Nitin Samarth +8 more
TL;DR: In this article, the authors reported the heteroepitaxy of single crystal thin films of Bi2Se3 on the surface of GaAs by molecular beam epitaxy, and they showed that Bi 2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate.
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Transport in two-dimensional topological materials: recent developments in experiment and theory
TL;DR: In this article, the authors review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering.
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Detecting the Majorana fermion surface state of 3He-B through spin relaxation.
Suk Bum Chung,Shou-Cheng Zhang +1 more
TL;DR: In this paper, an electron spin relaxation experiment was used to detect the Majorana fermion surface state through the Zeeman field direction dependence of the relaxation time, where the angle between the field and the surface normal was calculated.
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Ultra-thin Fe3C nanosheets promote the adsorption and conversion of polysulfides in lithium-sulfur batteries
Huanxin Li,Shuai Ma,Hou-Qin Cai,Haihui Zhou,Zhongyuan Huang,Zhaohui Hou,Jiajing Wu,Wenji Yang,Hai-Bo Yi,Chaopeng Fu,Yafei Kuang +10 more
TL;DR: In this paper, a mesoporous carbon (Fe3C-MC) nanosheets with high initial capacity of 1530 µm2 g-1 at 0.1 ǫC, and a capacity of 699 µm3 g-ǫg-1 after 100 cycles, at a super high sulfur loading of 9.0 µm 2
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