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Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

TLDR
In this paper, an angle-resolved photo-emission spectroscopy study was conducted to reveal the first observation of a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi-2Se-3 class of materials.
Abstract
Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks. It has been proposed that a topological insulator with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi_2Se_3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi_2Se_3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

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Anomalous Photoelectric Effect of a Polycrystalline Topological Insulator Film

TL;DR: Under illumination with non-polarised light, transport measurements reveal that the resistance of the topological surface states suddenly increases when the polycrystalline film is illuminated, and the resistance variation is positively dependent on the light intensity but has no relation to the applied electric field.
Journal ArticleDOI

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

TL;DR: In this article, back-gated ambipolar TI field effect transistors in (Bi0.04Sb0.96)2Te3 thin films were shown to exhibit a large carrier density tunability and a metal-insulator transition in the bulk (allowing switching off the bulk conduction).
Journal ArticleDOI

Topological Quantum Materials from the Viewpoint of Chemistry.

TL;DR: This review presents the topological concepts related to solids from the viewpoint of a solid-state chemist, summarizes techniques for growing single crystals, and describes basic physical property measurement techniques to characterize topological materials beyond their structure and provide examples of such materials.
Journal ArticleDOI

Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques

TL;DR: In this paper, the authors showed that a Bi2Se3/NiFe topological insulator with spin momentum locked topological surface states (TSS) exhibits a giant spin-orbit torque (SOT) driven magnetization switching at room temperature captured using a magneto-optic Kerr effect microscope.
Journal ArticleDOI

Computation and data driven discovery of topological phononic materials.

TL;DR: In this paper, the authors presented a high-throughput screening and data-driven approach to compute and evaluate topological phononics (TPs) among over 10,000 real materials and grouped them into two main classes of Weyl and nodal line (ring) TPs.
References
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Journal ArticleDOI

Generalized Gradient Approximation Made Simple

TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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The rise of graphene

TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Quantum Spin Hall Insulator State in HgTe Quantum Wells

TL;DR: The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect.
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Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator

TL;DR: It is shown that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.
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