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Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

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TLDR
In this paper, an angle-resolved photo-emission spectroscopy study was conducted to reveal the first observation of a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi-2Se-3 class of materials.
Abstract
Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks. It has been proposed that a topological insulator with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi_2Se_3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi_2Se_3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

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Growth of high-mobility Bi2Te2Se nanoplatelets on hBN sheets by van der Waals epitaxy.

TL;DR: The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiO(x) substrates, which enables the observation of well-developed Shubnikov-de Haas oscillations.
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Magnetism-mediated thermoelectric performance of the Cr-doped bismuth telluride tetradymite

TL;DR: In this article, an improved quality criterion of bismuth telluride upon chromium substitution was reported, which indicated that taking advantage of such relatively easily implemented magnetic doping effects along with existing strategies can lead to enhanced efficiency of thermoelectric materials.
Journal ArticleDOI

Synthesis, properties and applications of 2D non-graphene materials

TL;DR: The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy.
Journal ArticleDOI

Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3

TL;DR: In this article, the authors show a strong dependence of the carrier relaxation time on the film thickness of Bi2Se3, which may result from the hybridization of Dirac cone states at the opposite surfaces for the thinnest films.
Journal ArticleDOI

Three-Dimensional Topological Insulators in I − III − VI 2 and II − IV − V 2 Chalcopyrite Semiconductors

TL;DR: It is shown that a large number of chalcopyrites can realize the topological insulating phase in their native states and become appealing candidates for novel spintronics devices.
References
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The rise of graphene

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Quantum Spin Hall Insulator State in HgTe Quantum Wells

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Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator

TL;DR: It is shown that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.
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